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IXTT12N150 - LITTELFUSE

Description: MOSFET, N-CH, 1.5KV, 12A, TO-268

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IXTT12N150 Details

  • Manufacturer Part Number:

    IXTT12N150

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • ECCN Code:

    EAR99

  • Manufacturer:

    Littelfuse Inc

  • YTEOL:

    6

  • Additional Feature:

    AVALANCHE RATED

  • Avalanche Energy Rating (Eas):

    750 mJ

  • Case Connection:

    DRAIN

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    1500 V

  • Drain Current-Max (ID):

    12 A

  • Drain-source On Resistance-Max:

    2.2 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • Feedback Cap-Max (Crss):

    80 pF

  • JEDEC-95 Code:

    TO-268AA

  • JESD-30 Code:

    R-PSSO-G2

  • JESD-609 Code:

    e3

  • Moisture Sensitivity Level:

    1

  • Number of Elements:

    1

  • Number of Terminals:

    2

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    150 °C

  • Operating Temperature-Min:

    -55 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE

  • Peak Reflow Temperature (Cel):

    260

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    890 W

  • Pulsed Drain Current-Max (IDM):

    40 A

  • Surface Mount:

    YES

  • Terminal Finish:

    Matte Tin (Sn)

  • Terminal Form:

    GULL WING

  • Terminal Position:

    SINGLE

  • Time@Peak Reflow Temperature-Max (s):

    10

  • Transistor Element Material:

    SILICON

IXTT12N150 Frequently Asked Questions (FAQs)

  • The recommended PCB footprint for IXTT12N150 is a TO-220 package with a minimum pad size of 2.5mm x 2.5mm and a thermal pad size of 4.5mm x 4.5mm.
  • Yes, IXTT12N150 is a high-reliability device that meets the requirements of AEC-Q101, making it suitable for use in automotive and other high-reliability applications.
  • To ensure the thermal performance of IXTT12N150, it is recommended to use a heat sink with a thermal resistance of less than 1°C/W and to ensure good thermal contact between the device and the heat sink.
  • Yes, IXTT12N150 is compatible with lead-free soldering processes and meets the requirements of RoHS and WEEE directives.
  • The maximum operating junction temperature of IXTT12N150 is 150°C, but it is recommended to operate the device at a junction temperature of 125°C or less for optimal performance and reliability.

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IXTT12N150 Overview

Use the download button to access the IXTT12N150 3D model. You can still request or build the schematic symbol and PCB footprint by using the respective build or request forms on this page.
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Image Part Number Model
Part Image IXTT12N150HV Littelfuse Inc

Power Field-Effect Transistor, 12A I(D), 1500V, 2.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-268AA

Part Image IXTT12N150 IXYS Corporation

Power Field-Effect Transistor, 12A I(D), 1500V, 2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-268AA