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IXYP50N65C3 - LITTELFUSE

Description: XPTTM 650V IGBT GenX3TM

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Symbol
IXYP50N65C3 - LITTELFUSE - PCB symbol
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PCB Footprints
IXYP50N65C3 - LITTELFUSE PCB footprint - Transistor Outline, Vertical - Transistor Outline, Vertical - TO-220 (IXTP)_2023
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3D Models
IXYP50N65C3 - LITTELFUSE - 3D model - Transistor Outline, Vertical - TO-220 (IXTP)_2023
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IXYP50N65C3 Details

  • Manufacturer Part Number:

    IXYP50N65C3

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • ECCN Code:

    EAR99

  • Manufacturer:

    Littelfuse Inc

  • YTEOL:

    5.35

  • Case Connection:

    COLLECTOR

  • Collector Current-Max (IC):

    132 A

  • Collector-Emitter Voltage-Max:

    650 V

  • Configuration:

    SINGLE

  • Gate-Emitter Thr Voltage-Max:

    6 V

  • Gate-Emitter Voltage-Max:

    20 V

  • JEDEC-95 Code:

    TO-220AB

  • JESD-30 Code:

    R-PSFM-T3

  • JESD-609 Code:

    e3

  • Moisture Sensitivity Level:

    1

  • Number of Elements:

    1

  • Number of Terminals:

    3

  • Operating Temperature-Max:

    175 °C

  • Operating Temperature-Min:

    -55 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    FLANGE MOUNT

  • Peak Reflow Temperature (Cel):

    260

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    600 W

  • Surface Mount:

    NO

  • Terminal Finish:

    Matte Tin (Sn)

  • Terminal Form:

    THROUGH-HOLE

  • Terminal Position:

    SINGLE

  • Time@Peak Reflow Temperature-Max (s):

    10

  • Transistor Application:

    POWER CONTROL

  • Transistor Element Material:

    SILICON

  • Turn-off Time-Nom (toff):

    145 ns

  • Turn-on Time-Nom (ton):

    56 ns

  • VCEsat-Max:

    2.1 V

IXYP50N65C3 Frequently Asked Questions (FAQs)

  • The recommended PCB footprint for the IXYP50N65C3 is a TO-247-3L package with a minimum pad size of 12.7mm x 12.7mm and a thermal pad size of 4.5mm x 4.5mm.
  • To ensure proper cooling, a heat sink with a thermal resistance of less than 1°C/W is recommended. Additionally, the device should be mounted on a PCB with a thermal vias and a copper pour to dissipate heat efficiently.
  • The maximum allowed voltage transient for the IXYP50N65C3 is 80V for a duration of less than 100ns. Exceeding this limit may damage the device.
  • Yes, the IXYP50N65C3 can be used in a parallel configuration to increase current handling. However, it is essential to ensure that the devices are matched in terms of their electrical characteristics and that the PCB layout is designed to minimize current imbalance and thermal mismatch.
  • The recommended gate drive voltage for the IXYP50N65C3 is between 10V and 15V. A higher gate drive voltage can reduce switching losses, but may also increase gate charge and oscillations.

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IXYP50N65C3 Overview

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