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IXYX30N170CV1 - LITTELFUSE

Description: IXYS IXYX30N170CV1 IGBT, 100 A 1700 V, 3-Pin PLUS247

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Symbol
IXYX30N170CV1 - LITTELFUSE - PCB symbol
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PCB Footprints
IXYX30N170CV1 - LITTELFUSE PCB footprint - Transistor Outline, Vertical - Transistor Outline, Vertical - PLUS247TM (IXBX)
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3D Models
IXYX30N170CV1 - LITTELFUSE - 3D model - Transistor Outline, Vertical - PLUS247TM (IXBX)
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IXYX30N170CV1 Details

  • Manufacturer Part Number:

    IXYX30N170CV1

  • Part Life Cycle Code:

    Active

  • ECCN Code:

    EAR99

  • Manufacturer:

    Littelfuse Inc

  • YTEOL:

    5.3

  • Case Connection:

    COLLECTOR

  • Collector Current-Max (IC):

    100 A

  • Collector-Emitter Voltage-Max:

    1700 V

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • Gate-Emitter Thr Voltage-Max:

    5 V

  • Gate-Emitter Voltage-Max:

    20 V

  • JESD-30 Code:

    R-PSIP-T3

  • Number of Elements:

    1

  • Number of Terminals:

    3

  • Operating Temperature-Max:

    175 °C

  • Operating Temperature-Min:

    -55 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    IN-LINE

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    937 W

  • Surface Mount:

    NO

  • Terminal Form:

    THROUGH-HOLE

  • Terminal Position:

    SINGLE

  • Transistor Application:

    POWER CONTROL

  • Transistor Element Material:

    SILICON

  • Turn-off Time-Nom (toff):

    327 ns

  • Turn-on Time-Nom (ton):

    49 ns

  • VCEsat-Max:

    4 V

IXYX30N170CV1 Frequently Asked Questions (FAQs)

  • The recommended PCB footprint for IXYX30N170CV1 is a standard TO-220 package with a minimum pad size of 4.5mm x 4.5mm and a thermal pad size of 2.5mm x 2.5mm.
  • While IXYX30N170CV1 is a fast-switching IGBT, it's not recommended for high-frequency switching applications above 50 kHz due to its relatively high switching losses. For high-frequency applications, consider using a dedicated high-frequency IGBT or MOSFET.
  • To ensure reliable operation in high-temperature environments, ensure proper heat sinking, keep the junction temperature (Tj) below 150°C, and follow the recommended derating curves for voltage and current. Also, consider using a thermistor or temperature sensor to monitor the device temperature.
  • The maximum allowed voltage transient for IXYX30N170CV1 is 200V for a duration of 100ns. Exceeding this limit may cause device damage or failure.
  • Yes, you can parallel multiple IXYX30N170CV1 devices to increase current handling, but ensure that each device has its own gate resistor and that the gate signals are properly synchronized. Also, consider the increased complexity and potential for uneven current sharing.

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IXYX30N170CV1 Overview

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