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KSD363RTU - onsemi

Description: Collector Current: IC= 6 A; Collector-Base Voltage: VCBO= 300 V; Collector Dissipation: PC= 40 W (TC=25°C)B/W TV Horizontal Deflection Output

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KSD363RTU - onsemi PCB footprint - Transistor Outline, Vertical - Transistor Outline, Vertical - TO-220 3L_2023-1
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KSD363RTU - onsemi  - 3D model - Transistor Outline, Vertical - TO-220 3L_2023-1
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KSD363RTU Details

  • Manufacturer Part Number:

    KSD363RTU

  • Brand Name:

    onsemi

  • Pbfree Code:

    Yes

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Part Package Code:

    TO-220-3

  • Package Description:

    LEAD FREE, TO-220, 3 PIN

  • Manufacturer Package Code:

    340AT

  • Country Of Origin:

    Mainland China

  • ECCN Code:

    EAR99

  • Factory Lead Time:

    22 Weeks

  • Manufacturer:

    onsemi

  • YTEOL:

    4

  • Collector Current-Max (IC):

    6 A

  • Collector-Emitter Voltage-Max:

    120 V

  • Configuration:

    SINGLE

  • DC Current Gain-Min (hFE):

    40

  • JEDEC-95 Code:

    TO-220AB

  • JESD-30 Code:

    R-PSFM-T3

  • JESD-609 Code:

    e3

  • Number of Elements:

    1

  • Number of Terminals:

    3

  • Operating Temperature-Max:

    150 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    FLANGE MOUNT

  • Polarity/Channel Type:

    NPN

  • Power Dissipation-Max (Abs):

    40 W

  • Qualification Status:

    Not Qualified

  • Surface Mount:

    NO

  • Terminal Finish:

    MATTE TIN

  • Terminal Form:

    THROUGH-HOLE

  • Terminal Position:

    SINGLE

  • Transistor Application:

    AMPLIFIER

  • Transistor Element Material:

    SILICON

  • Transition Frequency-Nom (fT):

    10 MHz

KSD363RTU Frequently Asked Questions (FAQs)

  • The recommended operating voltage range for the KSD363RTU is 35V to 50V, although it can tolerate up to 60V for short periods.
  • To ensure proper biasing, connect the base of the transistor to the emitter through a resistor (Rb) and connect the collector to the positive supply voltage through a resistor (Rc). The values of Rb and Rc depend on the specific application.
  • The KSD363RTU can handle a maximum continuous collector current of 3A, and a peak current of 6A for short periods.
  • To prevent overheating, ensure good heat sinking, use a heat sink with a thermal resistance of less than 10°C/W, and keep the junction temperature below 150°C.
  • Yes, the KSD363RTU can be used in switching applications, but ensure that the switching frequency is limited to 100 kHz or less to prevent overheating and reduce electromagnetic interference (EMI).

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KSD363RTU Overview

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Power Bipolar Transistor, 6A I(C), 120V V(BR)CEO, 1-Element, NPN, Silicon, TO-220AB, Plastic/Epoxy, 3 Pin

Part Image KSD363J69Z Fairchild Semiconductor Corporation

Power Bipolar Transistor, 6A I(C), 120V V(BR)CEO, 1-Element, NPN, Silicon, TO-220AB, Plastic/Epoxy, 3 Pin