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LGD18N40ATH - LITTELFUSE

Description: IGBT Transistors DPAK, IGBT3

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LGD18N40ATH - LITTELFUSE  - 3D model
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LGD18N40ATH Details

  • Manufacturer Part Number:

    LGD18N40ATH

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Obsolete

  • ECCN Code:

    EAR99

  • Date Of Intro:

    2020-03-16

  • Manufacturer:

    Littelfuse Inc

  • YTEOL:

    0

  • Case Connection:

    COLLECTOR

  • Collector Current-Max (IC):

    15 A

  • Collector-Emitter Voltage-Max:

    430 V

  • Configuration:

    SINGLE WITH BUILT-IN TVS DIODE AND RESISTOR

  • Fall Time-Max (tf):

    15000 ns

  • Gate-Emitter Thr Voltage-Max:

    1.9 V

  • Gate-Emitter Voltage-Max:

    18 V

  • JESD-30 Code:

    R-PSSO-G2

  • Number of Elements:

    1

  • Number of Terminals:

    2

  • Operating Temperature-Max:

    175 °C

  • Operating Temperature-Min:

    -55 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    115 W

  • Reference Standard:

    AEC-Q101

  • Rise Time-Max (tr):

    7000 ns

  • Surface Mount:

    YES

  • Terminal Form:

    GULL WING

  • Terminal Position:

    SINGLE

  • Transistor Application:

    AUTOMOTIVE IGNITION

  • Transistor Element Material:

    SILICON

  • Turn-off Time-Max (toff):

    25000 ns

  • Turn-off Time-Nom (toff):

    13000 ns

  • Turn-on Time-Max (ton):

    11000 ns

  • Turn-on Time-Nom (ton):

    5200 ns

LGD18N40ATH Frequently Asked Questions (FAQs)

  • The recommended PCB footprint for LGD18N40ATH is a standard TO-220 package with a minimum pad size of 2.5mm x 2.5mm and a thermal pad size of 4.5mm x 4.5mm.
  • While LGD18N40ATH is a fast-switching IGBT, it's not recommended for high-frequency switching applications above 100 kHz due to its relatively high switching losses. For high-frequency applications, consider using a dedicated high-frequency IGBT or MOSFET.
  • To ensure reliable operation of LGD18N40ATH in high-temperature environments, ensure proper heat sinking, keep the junction temperature below 150°C, and follow the recommended derating curves for voltage and current.
  • Yes, you can parallel multiple LGD18N40ATH devices to increase current handling, but ensure that each device has its own gate resistor and that the gate signals are properly synchronized to prevent shoot-through currents.
  • The recommended gate drive voltage for LGD18N40ATH is between 10V and 15V, with a maximum gate-source voltage of ±20V.

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LGD18N40ATH Overview

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