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MBR2H100SFT3G - onsemi

Description: Guardring for Stress Protection; Low Forward Voltage; 175°C Operating Junction Temperature; Epoxy Meets UL94 V-0; Package Designed for Optimal Automated Board Assembly; ESD Ratings: Machine Model = C, Human Body Model = 3B; This is a Pb-Free Device Mechanical Characteristics:; Reel Options: MBR2H100SFT3G = 10,000 per 13 in reel/8 mm tape; Device Marking: L2H; Polarity Designator: Cathode Band; Weight: 11.7 mg (approximately); Case: Epoxy, Molded; Lead Finish: 100% Matte Sn (Tin); Lead and Mounting Surface T

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MBR2H100SFT3G - onsemi PCB footprint - Small Outline Diode Flat Lead - Small Outline Diode Flat Lead - SOD-123FL CASE498
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MBR2H100SFT3G - onsemi  - 3D model - Small Outline Diode Flat Lead - SOD-123FL CASE498
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MBR2H100SFT3G Details

  • Manufacturer Part Number:

    MBR2H100SFT3G

  • Brand Name:

    onsemi

  • Pbfree Code:

    Yes

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Part Package Code:

    SOD-123FL 2 LEAD

  • Pin Count:

    2

  • Manufacturer Package Code:

    498-01

  • Country Of Origin:

    Malaysia

  • ECCN Code:

    EAR99

  • HTS Code:

    8541.10.00.80

  • Factory Lead Time:

    8 Weeks

  • Manufacturer:

    onsemi

  • YTEOL:

    6.07

  • Additional Feature:

    FREE WHEELING DIODE

  • Application:

    POWER

  • Breakdown Voltage-Min:

    100 V

  • Configuration:

    SINGLE

  • Diode Element Material:

    SILICON

  • Diode Type:

    RECTIFIER DIODE

  • Forward Voltage-Max (VF):

    0.84 V

  • JESD-30 Code:

    R-PDSO-F2

  • JESD-609 Code:

    e3

  • Moisture Sensitivity Level:

    1

  • Non-rep Pk Forward Current-Max:

    50 A

  • Number of Elements:

    1

  • Number of Phases:

    1

  • Number of Terminals:

    2

  • Operating Temperature-Max:

    175 °C

  • Operating Temperature-Min:

    -65 °C

  • Output Current-Max:

    2 A

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE

  • Peak Reflow Temperature (Cel):

    260

  • Power Dissipation-Max:

    0.84 W

  • Qualification Status:

    Not Qualified

  • Rep Pk Reverse Voltage-Max:

    100 V

  • Reverse Current-Max:

    40 µA

  • Reverse Test Voltage:

    100 V

  • Surface Mount:

    YES

  • Technology:

    SCHOTTKY

  • Terminal Finish:

    Matte Tin (Sn) - annealed

  • Terminal Form:

    FLAT

  • Terminal Position:

    DUAL

  • Time@Peak Reflow Temperature-Max (s):

    30

MBR2H100SFT3G Frequently Asked Questions (FAQs)

  • The maximum operating temperature range for the MBR2H100SFT3G is -55°C to 150°C.
  • To ensure reliability, it's essential to follow the recommended derating curves, ensure proper thermal management, and consider the device's power dissipation and thermal resistance.
  • The recommended footprint and land pattern for the MBR2H100SFT3G can be found in the onsemi application note AND8325/D, which provides detailed guidelines for PCB design and layout.
  • Yes, the MBR2H100SFT3G is suitable for high-frequency switching applications up to 100 kHz. However, it's essential to consider the device's switching losses, parasitic inductance, and capacitive effects.
  • To protect the MBR2H100SFT3G from ESD, follow proper handling and storage procedures, use ESD-protective packaging, and consider adding ESD protection devices in the circuit design.

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MBR2H100SFT3G Overview

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Part Image NRVB2H100SFT3G onsemi

Rectifier Diode, Schottky, 1 Phase, 1 Element, 2A, 100V V(RRM), Silicon