MBR2H Model Download Search Results
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MBR2H200SFT1G
onsemi
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1 | Guardring for Stress Protection; Low Forward VoltageLow Forward Voltage; Epoxy Meets UL 94 V−0; Package Designed for Optimal Automated Board Assembly; These are Pb−Free Devices | Small Outline Diode Flat Lead | MBR2H200SFT1G |
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MBR2H200SFT3G
onsemi
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1 | Guardring for Stress Protection; Low Forward VoltageLow Forward Voltage; Epoxy Meets UL 94 V−0; Package Designed for Optimal Automated Board Assembly; These are Pb−Free Devices | Small Outline Diode Flat Lead | MBR2H200SFT3G |
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MBR2H100SFT3G
onsemi
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1 | Guardring for Stress Protection; Low Forward Voltage; 175°C Operating Junction Temperature; Epoxy Meets UL94 V-0; Package Designed for Optimal Automated Board Assembly; ESD Ratings: Machine Model = C, Human Body Model = 3B; This is a Pb-Free Device Mechanical Characteristics:; Reel Options: MBR2H100SFT3G = 10,000 per 13 in reel/8 mm tape; Device Marking: L2H; Polarity Designator: Cathode Band; Weight: 11.7 mg (approximately); Case: Epoxy, Molded; Lead Finish: 100% Matte Sn (Tin); Lead and Mounting Surface T | Small Outline Diode Flat Lead | MBR2H100SFT3G |
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MBR2H100SF
Nexperia
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1 | Rectifier Diode, Schottky, 1 Phase, 1 Element, 2A, 100V V(RRM), Silicon | MBR2H100SF |
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