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MBR2H200SFT1G - onsemi

Description: Guardring for Stress Protection; Low Forward VoltageLow Forward Voltage; Epoxy Meets UL 94 V−0; Package Designed for Optimal Automated Board Assembly; These are Pb−Free Devices

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MBR2H200SFT1G - onsemi PCB footprint - Small Outline Diode Flat Lead - Small Outline Diode Flat Lead - SOD-123FL CASE498 ISSUE B
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MBR2H200SFT1G - onsemi  - 3D model - Small Outline Diode Flat Lead - SOD-123FL CASE498 ISSUE B
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MBR2H200SFT1G Details

  • Manufacturer Part Number:

    MBR2H200SFT1G

  • Brand Name:

    onsemi

  • Pbfree Code:

    Yes

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Part Package Code:

    SOD-123FL 2 LEAD

  • Package Description:

    SOD-123FL, 2 PIN

  • Manufacturer Package Code:

    498-01

  • Country Of Origin:

    Malaysia

  • ECCN Code:

    EAR99

  • HTS Code:

    8541.10.00.80

  • Manufacturer:

    onsemi

  • YTEOL:

    6.19

  • Additional Feature:

    FREE WHEELING DIODE

  • Application:

    POWER

  • Breakdown Voltage-Min:

    200 V

  • Configuration:

    SINGLE

  • Diode Element Material:

    SILICON

  • Diode Type:

    RECTIFIER DIODE

  • Forward Voltage-Max (VF):

    0.94 V

  • JESD-30 Code:

    R-PDSO-F2

  • JESD-609 Code:

    e3

  • Moisture Sensitivity Level:

    1

  • Non-rep Pk Forward Current-Max:

    30 A

  • Number of Elements:

    1

  • Number of Phases:

    1

  • Number of Terminals:

    2

  • Operating Temperature-Max:

    150 °C

  • Operating Temperature-Min:

    -55 °C

  • Output Current-Max:

    2 A

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE

  • Peak Reflow Temperature (Cel):

    260

  • Rep Pk Reverse Voltage-Max:

    200 V

  • Reverse Current-Max:

    200 µA

  • Reverse Test Voltage:

    200 V

  • Surface Mount:

    YES

  • Technology:

    SCHOTTKY

  • Terminal Finish:

    Matte Tin (Sn) - annealed

  • Terminal Form:

    FLAT

  • Terminal Position:

    DUAL

  • Time@Peak Reflow Temperature-Max (s):

    30

MBR2H200SFT1G Frequently Asked Questions (FAQs)

  • The maximum operating temperature range for the MBR2H200SFT1G is -55°C to 150°C.
  • Yes, the MBR2H200SFT1G is designed for high-reliability applications and is qualified to aerospace and defense standards.
  • The typical forward voltage drop for the MBR2H200SFT1G is around 0.8V to 1.2V, depending on the operating conditions.
  • Yes, the MBR2H200SFT1G is suitable for high-frequency switching applications up to 100 kHz, but the user should ensure that the device is properly snubbed to prevent ringing and oscillations.
  • The recommended storage temperature range for the MBR2H200SFT1G is -55°C to 150°C, and the device should be stored in a dry, clean environment to prevent damage.

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MBR2H200SFT1G Overview

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Part Image MBR2H200SFT3G onsemi

Rectifier Diode, Schottky, 1 Phase, 1 Element, 2A, 200V V(RRM), Silicon