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MCAC60P06-TP - MCC

Description: Power MOSFETS

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MCAC60P06-TP - MCC  - 3D model
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MCAC60P06-TP Details

  • Manufacturer Part Number:

    MCAC60P06-TP

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Country Of Origin:

    Mainland China

  • ECCN Code:

    EAR99

  • Manufacturer:

    Micro Commercial Components

  • DS Breakdown Voltage-Min:

    60 V

  • Drain Current-Max (ID):

    60 A

  • Peak Reflow Temperature (Cel):

    260

  • Time@Peak Reflow Temperature-Max (s):

    10

MCAC60P06-TP Frequently Asked Questions (FAQs)

  • The thermal resistance of the MCAC60P06-TP is typically around 2.5°C/W, but this can vary depending on the specific application and PCB design.
  • Yes, the MCAC60P06-TP is suitable for high-frequency switching applications up to 1 MHz, but the user should ensure that the device is properly bypassed and decoupled to minimize ringing and oscillations.
  • To ensure reliability in high-temperature environments, the user should follow proper derating guidelines, ensure good thermal management, and consider using a thermally conductive interface material to reduce thermal resistance.
  • A recommended PCB layout for the MCAC60P06-TP includes using a solid ground plane, minimizing trace lengths and loops, and placing decoupling capacitors close to the device. Additionally, the user should consider using a shielded enclosure and following good EMI design practices.
  • Yes, the MCAC60P06-TP can be used in a parallel configuration to increase current handling, but the user should ensure that the devices are properly matched and that the PCB layout is designed to minimize current imbalance and thermal mismatch.

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MCAC60P06-TP Overview

Use the download button to access the MCAC60P06-TP 3D model. You can still request or build the schematic symbol and PCB footprint by using the respective build or request forms on this page.
To find more CAD model downloads similar to this part, try a partial part number search, like MCAC6, or try a keyword search, such as Small Signal Field-Effect Transistors

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