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MGSF1N02LT1G - onsemi

Description: N-Channel 20 V 750mA (Ta) 400mW (Ta) Surface Mount SOT-23-3 (TO-236)

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MGSF1N02LT1G - onsemi PCB footprint - SOT23 (3-Pin) - SOT23 (3-Pin) - SOT-23 (TO-236) CASE 318 ISSUE AU
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MGSF1N02LT1G - onsemi  - 3D model - SOT23 (3-Pin) - SOT-23 (TO-236) CASE 318 ISSUE AU
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MGSF1N02LT1G Details

  • Manufacturer Part Number:

    MGSF1N02LT1G

  • Brand Name:

    onsemi

  • Pbfree Code:

    Yes

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Part Package Code:

    SOT-23 (TO-236) 3 LEAD

  • Package Description:

    TO-236, 3 PIN

  • Pin Count:

    3

  • Manufacturer Package Code:

    318

  • Country Of Origin:

    Mainland China

  • ECCN Code:

    EAR99

  • Factory Lead Time:

    13 Weeks

  • Manufacturer:

    onsemi

  • YTEOL:

    6.95

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    20 V

  • Drain Current-Max (ID):

    0.75 A

  • Drain-source On Resistance-Max:

    0.09 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • JEDEC-95 Code:

    TO-236AB

  • JESD-30 Code:

    R-PDSO-G3

  • JESD-609 Code:

    e3

  • Moisture Sensitivity Level:

    1

  • Number of Elements:

    1

  • Number of Terminals:

    3

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    150 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE

  • Peak Reflow Temperature (Cel):

    260

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    0.225 W

  • Qualification Status:

    Not Qualified

  • Surface Mount:

    YES

  • Terminal Finish:

    Matte Tin (Sn) - annealed

  • Terminal Form:

    GULL WING

  • Terminal Position:

    DUAL

  • Time@Peak Reflow Temperature-Max (s):

    30

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

MGSF1N02LT1G Frequently Asked Questions (FAQs)

  • The maximum operating frequency of the MGSF1N02LT1G is 1 GHz, but it can be used up to 2 GHz with some derating.
  • Thermal management is crucial for the MGSF1N02LT1G. Ensure good heat sinking, use a thermal interface material, and keep the device away from heat sources. The maximum junction temperature is 150°C.
  • Use a 2-layer or 4-layer PCB with a solid ground plane, keep the layout symmetrical, and minimize trace lengths and widths to reduce parasitic inductance and capacitance.
  • Yes, the MGSF1N02LT1G is suitable for switching regulator applications due to its low RDS(on) and high current capability. However, ensure proper gate drive and layout to minimize switching losses.
  • Handle the device by the body, use an ESD wrist strap or mat, and store the device in an anti-static bag or container. The MGSF1N02LT1G has an ESD rating of 2 kV human body model (HBM).

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MGSF1N02LT1G Overview

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Part Image MGSF1N02LT3 onsemi

Small Signal Field-Effect Transistor, 0.75A I(D), 20V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-236AB