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MIW30N65FA-BP - MCC

Description: IGBT Discrete

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PCB Footprints
MIW30N65FA-BP - MCC PCB footprint - Transistor Outline, Vertical - Transistor Outline, Vertical - MIW30N65FA-BP*
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3D Models
MIW30N65FA-BP - MCC  - 3D model - Transistor Outline, Vertical - MIW30N65FA-BP*
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MIW30N65FA-BP Details

  • Manufacturer Part Number:

    MIW30N65FA-BP

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Country Of Origin:

    Mainland China

  • ECCN Code:

    EAR99

  • Manufacturer:

    Micro Commercial Components

  • YTEOL:

    5.35

  • Collector Current-Max (IC):

    30 A

  • Collector-Emitter Voltage-Max:

    650 V

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • Gate-Emitter Thr Voltage-Max:

    5.5 V

  • Gate-Emitter Voltage-Max:

    20 V

  • JEDEC-95 Code:

    TO-247AB

  • JESD-30 Code:

    R-PSFM-T3

  • Number of Elements:

    1

  • Number of Terminals:

    3

  • Operating Temperature-Max:

    175 °C

  • Operating Temperature-Min:

    -40 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    FLANGE MOUNT

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    187 W

  • Surface Mount:

    NO

  • Terminal Form:

    THROUGH-HOLE

  • Terminal Position:

    SINGLE

  • Transistor Element Material:

    SILICON

  • Turn-off Time-Nom (toff):

    129 ns

  • Turn-on Time-Nom (ton):

    104 ns

  • VCEsat-Max:

    2.4 V

Trust Checks

This model has been built in collaboration with the manufacturer.
Manufacturer Collaborated
This model has been verified by system checks.
System Verified
This model has been reviewed by community users.
Community Approved
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MIW30N65FA-BP Overview

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