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MIW50N65F-BP - MCC

Description: Trench and Field Stop IGBT 650V 50A

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Symbol
MIW50N65F-BP - MCC - PCB symbol
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PCB Footprints
MIW50N65F-BP - MCC PCB footprint - Transistor Outline, Vertical - Transistor Outline, Vertical - TO-247AB
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3D Models
MIW50N65F-BP - MCC - 3D model - Transistor Outline, Vertical - TO-247AB
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MIW50N65F-BP Details

  • Manufacturer Part Number:

    MIW50N65F-BP

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Country Of Origin:

    Mainland China

  • ECCN Code:

    EAR99

  • Manufacturer:

    Micro Commercial Components

  • YTEOL:

    5.35

  • Collector Current-Max (IC):

    60 A

  • Collector-Emitter Voltage-Max:

    650 V

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • Gate-Emitter Thr Voltage-Max:

    5.8 V

  • Gate-Emitter Voltage-Max:

    20 V

  • JEDEC-95 Code:

    TO-247

  • JESD-30 Code:

    R-PSFM-T3

  • Number of Elements:

    1

  • Number of Terminals:

    3

  • Operating Temperature-Max:

    175 °C

  • Operating Temperature-Min:

    -40 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    FLANGE MOUNT

  • Peak Reflow Temperature (Cel):

    260

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    326 W

  • Surface Mount:

    NO

  • Terminal Form:

    THROUGH-HOLE

  • Terminal Position:

    SINGLE

  • Time@Peak Reflow Temperature-Max (s):

    10

  • Transistor Element Material:

    SILICON

  • Turn-off Time-Nom (toff):

    343 ns

  • Turn-on Time-Nom (ton):

    111 ns

  • VCEsat-Max:

    1.95 V

MIW50N65F-BP Frequently Asked Questions (FAQs)

  • The thermal resistance of the package is typically around 2.5°C/W, but this can vary depending on the specific application and PCB design. It's recommended to consult with the manufacturer or a thermal expert for a more accurate calculation.
  • Yes, the MIW50N65F-BP is suitable for high-frequency switching applications up to 1 MHz. However, it's essential to consider the gate drive requirements, layout, and PCB design to minimize parasitic inductance and ensure reliable operation.
  • The recommended gate drive voltage for the MIW50N65F-BP is between 10V and 15V. However, it's essential to consult the datasheet and application notes for specific gate drive requirements and to ensure compatibility with your driver circuit.
  • The MIW50N65F-BP is not AEC-Q101 qualified, which means it's not specifically designed for automotive applications. If you need a MOSFET for an automotive application, it's recommended to choose a device that meets the AEC-Q101 standard.
  • Yes, you can use multiple MIW50N65F-BP MOSFETs in parallel to increase current handling. However, it's crucial to ensure that the gate drive signals are properly synchronized, and the PCB layout is designed to minimize current imbalance and thermal mismatch between devices.

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MIW50N65F-BP Overview

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