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MIWP75N120-BP - MCC

Description: Trench and Field Stop IGBT 1200V 75A

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Symbol
MIWP75N120-BP - MCC - PCB symbol
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PCB Footprints
MIWP75N120-BP - MCC PCB footprint - Transistor Outline, Vertical - Transistor Outline, Vertical - TO-247
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3D Models
MIWP75N120-BP - MCC - 3D model - Transistor Outline, Vertical - TO-247
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MIWP75N120-BP Details

  • Manufacturer Part Number:

    MIWP75N120-BP

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Obsolete

  • Package Description:

    TO-247P, 3 PIN

  • Country Of Origin:

    Mainland China

  • ECCN Code:

    EAR99

  • Manufacturer:

    Micro Commercial Components

  • YTEOL:

    0

  • Collector Current-Max (IC):

    75 A

  • Collector-Emitter Voltage-Max:

    1200 V

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • Gate-Emitter Thr Voltage-Max:

    7 V

  • Gate-Emitter Voltage-Max:

    20 V

  • JEDEC-95 Code:

    TO-247

  • JESD-30 Code:

    R-PSIP-T3

  • Number of Elements:

    1

  • Number of Terminals:

    3

  • Operating Temperature-Max:

    175 °C

  • Operating Temperature-Min:

    -55 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    IN-LINE

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    789 W

  • Surface Mount:

    NO

  • Terminal Form:

    THROUGH-HOLE

  • Terminal Position:

    SINGLE

  • Transistor Application:

    POWER CONTROL

  • Transistor Element Material:

    SILICON

  • Turn-off Time-Nom (toff):

    678 ns

  • Turn-on Time-Nom (ton):

    249 ns

  • VCEsat-Max:

    1.9 V

MIWP75N120-BP Frequently Asked Questions (FAQs)

  • The recommended PCB footprint for the MIWP75N120-BP is a 5-pin TO-220 package with a minimum pad size of 1.5mm x 1.5mm and a thermal pad size of 2.5mm x 2.5mm.
  • Yes, the MIWP75N120-BP is suitable for high-frequency switching applications up to 100 kHz, but it's essential to ensure proper PCB layout, decoupling, and thermal management to minimize losses and prevent overheating.
  • To ensure reliability in high-temperature environments, it's crucial to follow the recommended derating curves, provide adequate heat sinking, and ensure proper thermal interface material (TIM) is used between the device and the heat sink.
  • The maximum allowed voltage transient for the MIWP75N120-BP is 150 V for a duration of 100 ms, but it's recommended to limit transients to 120 V to ensure device reliability.
  • Yes, you can parallel multiple MIWP75N120-BP devices to increase current handling, but it's essential to ensure proper current sharing, thermal management, and gate drive synchronization to prevent uneven current distribution and thermal runaway.

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MIWP75N120-BP Overview

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