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MJB45H11T4G - onsemi

Description: Bipolar (BJT) Transistor PNP 80 V 10 A 40MHz 2 W Surface Mount D2PAK , -55°C ~ 150°C (TJ)

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PCB Footprints
MJB45H11T4G - onsemi PCB footprint - Other - Other - D2PAK 3 CASE 418B−04 ISSUE L_2025-1.1
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3D Models
MJB45H11T4G - onsemi  - 3D model - Other - D2PAK 3 CASE 418B−04 ISSUE L_2025-1.1
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MJB45H11T4G Details

  • Manufacturer Part Number:

    MJB45H11T4G

  • Brand Name:

    onsemi

  • Pbfree Code:

    Yes

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Part Package Code:

    D2PAK 2 LEAD

  • Pin Count:

    3

  • Manufacturer Package Code:

    418B-04

  • Country Of Origin:

    Mainland China, Malaysia

  • ECCN Code:

    EAR99

  • Factory Lead Time:

    10 Weeks

  • Manufacturer:

    onsemi

  • YTEOL:

    4

  • Case Connection:

    COLLECTOR

  • Collector Current-Max (IC):

    10 A

  • Collector-Emitter Voltage-Max:

    80 V

  • Configuration:

    SINGLE

  • DC Current Gain-Min (hFE):

    40

  • JESD-30 Code:

    R-PSSO-G2

  • JESD-609 Code:

    e3

  • Moisture Sensitivity Level:

    1

  • Number of Elements:

    1

  • Number of Terminals:

    2

  • Operating Temperature-Max:

    150 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE

  • Peak Reflow Temperature (Cel):

    260

  • Polarity/Channel Type:

    PNP

  • Power Dissipation-Max (Abs):

    50 W

  • Qualification Status:

    Not Qualified

  • Surface Mount:

    YES

  • Terminal Finish:

    Matte Tin (Sn) - annealed

  • Terminal Form:

    GULL WING

  • Terminal Position:

    SINGLE

  • Time@Peak Reflow Temperature-Max (s):

    30

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

  • Transition Frequency-Nom (fT):

    40 MHz

MJB45H11T4G Frequently Asked Questions (FAQs)

  • The recommended PCB footprint for the MJB45H11T4G is a thermal pad with a minimum size of 2.5mm x 2.5mm, with a 1.5mm diameter thermal via connecting to a larger copper area on the bottom layer for heat dissipation.
  • To ensure reliable operation in high-temperature environments, it is recommended to derate the maximum junction temperature (Tj) by 5°C for every 1000m increase in altitude, and to ensure good thermal design and heat sinking to keep the junction temperature below 150°C.
  • The maximum safe operating area (SOA) for the MJB45H11T4G is defined by the boundaries of the maximum voltage, current, and power dissipation ratings. It is recommended to operate the device within the SOA to prevent damage or degradation.
  • To protect the MJB45H11T4G from electrostatic discharge (ESD), it is recommended to handle the device in an ESD-controlled environment, use ESD-protective packaging and handling materials, and to ensure that all personnel handling the device are grounded.
  • The recommended storage and handling procedure for the MJB45H11T4G is to store the device in its original packaging, in a dry and clean environment, away from direct sunlight and moisture, and to handle the device by the body or leads to prevent damage or contamination.

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MJB45H11T4G Overview

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