MJB45 Model Download Search Results
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MJB45H11T4G
onsemi
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1 | Bipolar (BJT) Transistor PNP 80 V 10 A 40MHz 2 W Surface Mount D2PAK , -55°C ~ 150°C (TJ) | Other | MJB45H11T4G |
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MJB45H11G
onsemi
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1 | Low Collector-Emitter Saturation Voltage - VCE(sat) = 1.0 V (Max) @ 8.0 A; Fast Switching Speeds; Complementary Pairs Simplifies Designs; NJV Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable; PbFree Packages are Available | Other | MJB45H11G |
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NJVMJB45H11T4G
onsemi
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1 | Low Collector-Emitter Saturation Voltage - VCE(sat) = 1.0 V (Max) @ 8.0 A; Fast Switching Speeds; Complementary Pairs Simplifies Designs; NJV Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable; PbFree Packages are Available | Other | NJVMJB45H11T4G |
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MJB45H11T4
onsemi
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1 | Power Bipolar Transistor, 10A I(C), 80V V(BR)CEO, 1-Element, PNP, Silicon, Plastic/Epoxy, 2 Pin | MJB45H11T4 |
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MJB45H11
onsemi
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1 | Power Bipolar Transistor, 10A I(C), 80V V(BR)CEO, 1-Element, PNP, Silicon, Plastic/Epoxy, 2 Pin | MJB45H11 |
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![Part Image](["https://componentsearchengine.com/Images/9/MJB45H11T4G.jpg",null,null])
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