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MJD112RLG - onsemi

Description: Lead Formed Version in 16 mm Tape and Reel ("T4" Suffix); High DC Current Gain hFE = 2,500 (Typ) @ IC = 2.0 Adc; Monolithic Construction With Built-in Base-Emitter Shunt Resistors; Lead Formed for Surface Mount Applications in Plastic Sleeves (No Suffix); Straight Lead Version in Plastic Sleeves ("1" Suffix); Surface Mount Replacements for TIP110-TIP117 Series; Complementary Pairs Simplifies Designs; NJV Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC-

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MJD112RLG - onsemi PCB footprint - Other - Other - MJD112RLG-1
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MJD112RLG Details

  • Manufacturer Part Number:

    MJD112RLG

  • Brand Name:

    onsemi

  • Pbfree Code:

    Yes

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Part Package Code:

    DPAK (SINGLE GAUGE) TO-252

  • Package Description:

    DPAK-3

  • Pin Count:

    3

  • Manufacturer Package Code:

    369C

  • Country Of Origin:

    Mainland China

  • ECCN Code:

    EAR99

  • Factory Lead Time:

    8 Weeks

  • Manufacturer:

    onsemi

  • YTEOL:

    4

  • Case Connection:

    COLLECTOR

  • Collector Current-Max (IC):

    2 A

  • Collector-Emitter Voltage-Max:

    100 V

  • Configuration:

    DARLINGTON WITH BUILT-IN DIODE AND RESISTOR

  • DC Current Gain-Min (hFE):

    200

  • JESD-30 Code:

    R-PSSO-G2

  • JESD-609 Code:

    e3

  • Moisture Sensitivity Level:

    1

  • Number of Elements:

    1

  • Number of Terminals:

    2

  • Operating Temperature-Max:

    150 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE

  • Peak Reflow Temperature (Cel):

    260

  • Polarity/Channel Type:

    NPN

  • Power Dissipation-Max (Abs):

    20 W

  • Qualification Status:

    Not Qualified

  • Surface Mount:

    YES

  • Terminal Finish:

    Matte Tin (Sn) - annealed

  • Terminal Form:

    GULL WING

  • Terminal Position:

    SINGLE

  • Time@Peak Reflow Temperature-Max (s):

    30

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

  • Transition Frequency-Nom (fT):

    25 MHz

MJD112RLG Frequently Asked Questions (FAQs)

  • A thermal pad on the bottom of the package should be connected to a large copper area on the PCB to dissipate heat. A minimum of 2 oz copper thickness is recommended. Additionally, thermal vias can be used to further improve heat dissipation.
  • Ensure that the device is operated within the recommended temperature range (-55°C to 150°C). Use a heat sink or thermal interface material to improve heat dissipation. Also, consider derating the device's power handling at high temperatures.
  • A gate drive circuit with a low impedance output and a high current capability is recommended. A gate resistor value between 10 ohms to 100 ohms is typical. The gate drive voltage should be set to the recommended value (typically 10-15V) to ensure optimal switching performance.
  • Use a transient voltage suppressor (TVS) or a zener diode to clamp voltage transients. Ensure that the device is operated within the recommended voltage and current ratings. Use a fuse or a current limiter to prevent overcurrent conditions.
  • Store the devices in their original packaging or in a dry, ESD-protected environment. Avoid exposing the devices to moisture, extreme temperatures, or physical stress. Handle the devices by the body or the leads, avoiding touching the die or wire bonds.

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MJD112RLG Overview

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MJD112RLG Alternates

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Part Image MJD112T4 STMicroelectronics

Power Bipolar Transistor, 2A I(C), 100V V(BR)CEO, 1-Element, PNP, Silicon, TO-252, Plastic/Epoxy, 2 Pin

Part Image MJD112 onsemi

Power Bipolar Transistor, 2A I(C), 100V V(BR)CEO, 1-Element, NPN, Silicon, Plastic/Epoxy, 2 Pin

Part Image MJD112-T1 Samsung Semiconductor

Power Bipolar Transistor, 2A I(C), 100V V(BR)CEO, 1-Element, NPN, Silicon, Plastic/Epoxy, 2 Pin

Part Image MJD112T4 onsemi

Power Bipolar Transistor, 2A I(C), 100V V(BR)CEO, 1-Element, NPN, Silicon, Plastic/Epoxy, 2 Pin

Part Image CJD112TR13 Central Semiconductor Corp

Power Bipolar Transistor, 2A I(C), 100V V(BR)CEO, 1-Element, NPN, Silicon, Plastic/Epoxy, 2 Pin

For a full list of alternate parts for MJD112RLG, check out Findchips.com