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MJD117T4G - onsemi

Description: Lead Formed Version in 16 mm Tape and Reel ("T4" Suffix); High DC Current Gain hFE = 2500 (Typ) @ IC = 2.0 Adc; Monolithic Construction With Built-in Base-Emitter Shunt Resistors; Lead Formed for Surface Mount Applications in Plastic Sleeves (No Suffix); Straight Lead Version in Plastic Sleeves ("1" Suffix); Surface Mount Replacements for TIP110-TIP117 Series; Complementary Pairs Simplifies Designs; NJV Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC-Q

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MJD117T4G - onsemi PCB footprint - Other - Other - MJD117T4G-1
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MJD117T4G Details

  • Manufacturer Part Number:

    MJD117T4G

  • Brand Name:

    onsemi

  • Pbfree Code:

    Yes

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Part Package Code:

    DPAK (SINGLE GAUGE) TO-252

  • Package Description:

    DPAK-3

  • Pin Count:

    3

  • Manufacturer Package Code:

    369C

  • Country Of Origin:

    Mainland China

  • ECCN Code:

    EAR99

  • Factory Lead Time:

    8 Weeks

  • Manufacturer:

    onsemi

  • YTEOL:

    4

  • Case Connection:

    COLLECTOR

  • Collector Current-Max (IC):

    2 A

  • Collector-Emitter Voltage-Max:

    100 V

  • Configuration:

    DARLINGTON WITH BUILT-IN DIODE AND RESISTOR

  • DC Current Gain-Min (hFE):

    200

  • JESD-30 Code:

    R-PSSO-G2

  • JESD-609 Code:

    e3

  • Moisture Sensitivity Level:

    1

  • Number of Elements:

    1

  • Number of Terminals:

    2

  • Operating Temperature-Max:

    150 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE

  • Peak Reflow Temperature (Cel):

    260

  • Polarity/Channel Type:

    PNP

  • Power Dissipation-Max (Abs):

    20 W

  • Qualification Status:

    Not Qualified

  • Surface Mount:

    YES

  • Terminal Finish:

    Matte Tin (Sn) - annealed

  • Terminal Form:

    GULL WING

  • Terminal Position:

    SINGLE

  • Time@Peak Reflow Temperature-Max (s):

    30

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

  • Transition Frequency-Nom (fT):

    25 MHz

MJD117T4G Frequently Asked Questions (FAQs)

  • The maximum safe operating area (SOA) for the MJD117T4G is not explicitly stated in the datasheet, but it can be estimated based on the device's thermal resistance and maximum junction temperature. A safe operating area can be assumed to be within the boundaries of the maximum voltage, current, and power dissipation ratings.
  • To ensure the MJD117T4G is properly biased for linear operation, the base-emitter voltage (VBE) should be set between 0.6V to 0.8V, and the collector-emitter voltage (VCE) should be set to at least 1V to 2V above the supply voltage. Additionally, the base current should be limited to prevent overheating.
  • For optimal thermal management, the MJD117T4G should be mounted on a heat sink with a thermal resistance of less than 10°C/W. The PCB layout should ensure good thermal conductivity, and the device should be placed away from other heat sources. A copper pour or thermal pad can be used to dissipate heat.
  • While the MJD117T4G is primarily designed for linear amplification, it can be used in switching applications with proper design considerations. However, the device's switching speed and frequency limitations should be taken into account, and a suitable driver circuit may be required to ensure reliable switching.
  • To protect the MJD117T4G from electrostatic discharge (ESD), proper handling and storage procedures should be followed. The device should be stored in an anti-static bag or wrapped in anti-static material, and handling should be done with anti-static wrist straps or mats. ESD protection devices, such as TVS diodes, can also be used in the circuit design.

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MJD117T4G Overview

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