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MJD148T4G - onsemi

Description: Lead Formed for Surface Mount Applications in Plastic Sleeves (No Suffix); Lead Formed Version Available in 16 mm Tape and Reel ("T4" Suffix); High Gain - 50 Min @ IC = 2.0 Amps; Low Saturation Voltage - 0.5 V @ IC = 2.0 Amps; High Current Gain-Bandwidth Product - fT = 3.0 MHz Min @ IC = 250 mAdc; NJV Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable; These Devices are Pb-Free and are RoHS Compliant

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MJD148T4G - onsemi PCB footprint - Other - Other - DPAK (SINGLE GAUGE) TO-252 (369C) ISSUE F_1
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MJD148T4G - onsemi  - 3D model - Other - DPAK (SINGLE GAUGE) TO-252 (369C) ISSUE F_1
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MJD148T4G Details

  • Manufacturer Part Number:

    MJD148T4G

  • Brand Name:

    onsemi

  • Pbfree Code:

    Yes

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Part Package Code:

    DPAK (SINGLE GAUGE) TO-252

  • Package Description:

    DPAK-3

  • Pin Count:

    3

  • Manufacturer Package Code:

    369C

  • Country Of Origin:

    Mainland China

  • ECCN Code:

    EAR99

  • Factory Lead Time:

    8 Weeks

  • Manufacturer:

    onsemi

  • YTEOL:

    4

  • Case Connection:

    COLLECTOR

  • Collector Current-Max (IC):

    4 A

  • Collector-Emitter Voltage-Max:

    45 V

  • Configuration:

    SINGLE

  • DC Current Gain-Min (hFE):

    30

  • JESD-30 Code:

    R-PSSO-G2

  • JESD-609 Code:

    e3

  • Moisture Sensitivity Level:

    1

  • Number of Elements:

    1

  • Number of Terminals:

    2

  • Operating Temperature-Max:

    150 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE

  • Peak Reflow Temperature (Cel):

    260

  • Polarity/Channel Type:

    NPN

  • Power Dissipation-Max (Abs):

    20 W

  • Qualification Status:

    Not Qualified

  • Surface Mount:

    YES

  • Terminal Finish:

    Matte Tin (Sn) - annealed

  • Terminal Form:

    GULL WING

  • Terminal Position:

    SINGLE

  • Time@Peak Reflow Temperature-Max (s):

    30

  • Transistor Application:

    AMPLIFIER

  • Transistor Element Material:

    SILICON

  • Transition Frequency-Nom (fT):

    3 MHz

MJD148T4G Frequently Asked Questions (FAQs)

  • The maximum safe operating area (SOA) for the MJD148T4G is not explicitly stated in the datasheet, but it can be estimated based on the device's thermal resistance and maximum junction temperature. A general rule of thumb is to limit the device's power dissipation to 60-70% of its maximum rating to ensure reliable operation.
  • To ensure the MJD148T4G is properly biased for linear operation, you should follow the recommended biasing scheme outlined in the datasheet. This typically involves setting the base-emitter voltage (VBE) to around 0.7V and the collector-emitter voltage (VCE) to around 1-2V. You should also ensure that the device is operated within its recommended operating conditions, including temperature and current limits.
  • The recommended PCB layout and thermal management strategy for the MJD148T4G involves using a multi-layer PCB with a solid ground plane, placing the device near a heat sink or thermal pad, and using thermal vias to dissipate heat. You should also ensure that the device is mounted on a suitable heat sink or thermal interface material to minimize thermal resistance.
  • To handle ESD protection for the MJD148T4G, you should follow standard ESD protection practices, including using ESD-sensitive handling and storage procedures, using ESD-protective packaging, and incorporating ESD protection devices (such as TVS diodes or ESD arrays) into your circuit design.
  • The reliability and lifespan expectations for the MJD148T4G are dependent on various factors, including operating conditions, temperature, and usage patterns. However, as a general guideline, the MJD148T4G is designed to meet the reliability standards outlined in the JEDEC JESD47 standard, which specifies a minimum of 100,000 hours of operation at 40°C.

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MJD148T4G Overview

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