MJD14 Model Download Search Results

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Image Part Number D.S Description Package Category Prices / Stock Model Action
Image Part Number D.S Description Package Category Prices / Stock Model Action
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MJD148-QJ Nexperia
1 Bipolar Transistors - BJT MJD148-Q - 45 V, 4 A NPN high power bipolar transistor Other MJD148-QJ 1 Download Model
Part Image Part Image 1 Lead Formed for Surface Mount Applications in Plastic Sleeves (No Suffix); Lead Formed Version Available in 16 mm Tape and Reel ("T4" Suffix); High Gain - 50 Min @ IC = 2.0 Amps; Low Saturation Voltage - 0.5 V @ IC = 2.0 Amps; High Current Gain-Bandwidth Product - fT = 3.0 MHz Min @ IC = 250 mAdc; NJV Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable; These Devices are Pb-Free and are RoHS Compliant Other MJD148T4G 1 Download Model
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MJD148-Q Nexperia
1 Power Bipolar Transistor, 4A I(C), 45V V(BR)CEO, 1-Element, NPN, Silicon, TO-252, Plastic/Epoxy, 2 Pin MJD148-Q 0 Build or Request
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MJD148 Nexperia
1 Power Bipolar Transistor, 4A I(C), 45V V(BR)CEO, 1-Element, NPN, Silicon, TO-252, Plastic/Epoxy, 2 Pin MJD148 0 Build or Request
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MJD148-2 onsemi
1 Power Bipolar Transistor, 4A I(C), 45V V(BR)CEO, 1-Element, NPN, Silicon, Plastic/Epoxy, 2 Pin MJD148-2 0 Build or Request
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MJD148 Freescale Semiconductor
1 TRANSISTOR,BJT,NPN,45V V(BR)CEO,4A I(C),TO-252 MJD148 0 Build or Request
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MJD148J Nexperia
1 Power Bipolar Transistor MJD148J 0 Build or Request
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MJD148T4 Motorola Semiconductor Products
1 Power Bipolar Transistor, 4A I(C), 45V V(BR)CEO, 1-Element, NPN, Silicon, Plastic/Epoxy, 2 Pin MJD148T4 0 Build or Request
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MJD148-1 Freescale Semiconductor
1 TRANSISTOR,BJT,NPN,45V V(BR)CEO,4A I(C),TO-251 MJD148-1 0 Build or Request
Part Image Part Image 1 Power Bipolar Transistor, 4A I(C), 45V V(BR)CEO, 1-Element, NPN, Silicon, Plastic/Epoxy, 2 Pin MJD148-2T4 0 Build or Request
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MJD148 Motorola Semiconductor Products
1 Power Bipolar Transistor, 4A I(C), 45V V(BR)CEO, 1-Element, NPN, Silicon, Plastic/Epoxy, 2 Pin MJD148 0 Build or Request
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MJD148-1 Motorola Semiconductor Products
1 Power Bipolar Transistor, 4A I(C), 45V V(BR)CEO, 1-Element, NPN, Silicon, Plastic/Epoxy, 3 Pin MJD148-1 0 Build or Request
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MJD148T4 onsemi
1 Power Bipolar Transistor, 4A I(C), 45V V(BR)CEO, 1-Element, NPN, Silicon, Plastic/Epoxy, 2 Pin MJD148T4 0 Build or Request
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MJD148 Continental Device India Ltd
1 RF/Microwave Device MJD148 0 Build or Request
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5.0SMJD14A-T500 ProTek Devices
1 Trans Voltage Suppressor Diode, 28000W, 14V V(RWM), Unidirectional, 1 Element, Silicon, DO-214AB 5.0SMJD14A-T500 0 Build or Request
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5.0SMJD14A-T13 ProTek Devices
1 Trans Voltage Suppressor Diode, 28000W, 14V V(RWM), Unidirectional, 1 Element, Silicon, DO-214AB 5.0SMJD14A-T13 0 Build or Request
Part Image Part Image 1 Lead Formed for Surface Mount Applications in Plastic Sleeves (No Suffix); Lead Formed Version Available in 16 mm Tape and Reel ("T4" Suffix); High Gain - 50 Min @ IC = 2.0 Amps; Low Saturation Voltage - 0.5 V @ IC = 2.0 Amps; High Current Gain-Bandwidth Product - fT = 3.0 MHz Min @ IC = 250 mAdc; NJV Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable; These Devices are Pb-Free and are RoHS Compliant NJVMJD148T4G 1 Download Model
Part Image Part Image 1 Power Bipolar Transistor, 4A I(C), 45V V(BR)CEO, 1-Element, NPN, Silicon, Plastic/Epoxy, 2 Pin NJVMJD148T4G-VF01 0 Build or Request
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5.0SMJD14CA-T13 ProTek Devices
1 Trans Voltage Suppressor Diode, 28000W, 14V V(RWM), Bidirectional, 1 Element, Silicon, DO-214AB 5.0SMJD14CA-T13 0 Build or Request
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5.0SMJD14CA-T500 ProTek Devices
1 Trans Voltage Suppressor Diode, 28000W, 14V V(RWM), Bidirectional, 1 Element, Silicon, DO-214AB 5.0SMJD14CA-T500 0 Build or Request
Part Image Part Image 1 Power Bipolar Transistor 934662846118 0 Build or Request
Part Image Part Image 1 Power Bipolar Transistor 934662267118 0 Build or Request
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