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MJD2955G - onsemi

Description: Lead Formed for Surface Mount Applications in Plastic Sleeves (No Suffix); DC Current Gain Specified to 10 Amperes; Straight Lead Version in Plastic Sleeves ("-1" Suffix); Electrically Similar to MJE2955 and MJE3055; Lead Formed Version Available in 16 mm Tape and Reel ("T4" Suffix); High Current Gain-Bandwidth Product fT = 2.0 MHz (Min) @ IC = 500 mAdc; NJV Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable; These are PbFr

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MJD2955G - onsemi PCB footprint - Other - Other - DPAK (SINGLE GAUGE) CASE 369C ISSUE G_ 2024
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MJD2955G Details

  • Manufacturer Part Number:

    MJD2955G

  • Brand Name:

    onsemi

  • Pbfree Code:

    Yes

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Part Package Code:

    DPAK (SINGLE GAUGE) TO-252

  • Pin Count:

    3

  • Manufacturer Package Code:

    369C

  • Country Of Origin:

    Mainland China

  • ECCN Code:

    EAR99

  • Factory Lead Time:

    8 Weeks

  • Manufacturer:

    onsemi

  • YTEOL:

    4

  • Case Connection:

    COLLECTOR

  • Collector Current-Max (IC):

    10 A

  • Collector-Emitter Voltage-Max:

    60 V

  • Configuration:

    SINGLE

  • DC Current Gain-Min (hFE):

    5

  • JESD-30 Code:

    R-PSSO-G2

  • JESD-609 Code:

    e3

  • Moisture Sensitivity Level:

    1

  • Number of Elements:

    1

  • Number of Terminals:

    2

  • Operating Temperature-Max:

    150 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE

  • Peak Reflow Temperature (Cel):

    260

  • Polarity/Channel Type:

    PNP

  • Power Dissipation-Max (Abs):

    20 W

  • Qualification Status:

    Not Qualified

  • Surface Mount:

    YES

  • Terminal Finish:

    Matte Tin (Sn) - annealed

  • Terminal Form:

    GULL WING

  • Terminal Position:

    SINGLE

  • Time@Peak Reflow Temperature-Max (s):

    30

  • Transistor Application:

    AMPLIFIER

  • Transistor Element Material:

    SILICON

  • Transition Frequency-Nom (fT):

    2 MHz

MJD2955G Frequently Asked Questions (FAQs)

  • The MJD2955G can operate from -55°C to 150°C, but the recommended operating temperature range is -40°C to 125°C for optimal performance.
  • The MJD2955G requires a bias voltage of 5V to 15V, and the recommended bias current is 1mA to 10mA. Ensure the bias voltage is stable and noise-free for optimal performance.
  • The maximum power dissipation for the MJD2955G is 2W, and it's essential to ensure proper heat sinking to prevent overheating.
  • Yes, the MJD2955G can be used in switching applications, but it's essential to ensure the device is properly biased and the switching frequency is within the recommended range (up to 100 kHz).
  • The MJD2955G is sensitive to ESD, so it's essential to handle the device with proper ESD protection, such as using an ESD wrist strap or mat, and storing the device in an anti-static bag.

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MJD2955G Overview

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Part Image MJD2955 Rochester Electronics LLC

10A, 60V, PNP, Si, POWER TRANSISTOR, PLASTIC, CASE 369C-01, DPAK-3

Part Image MJD2955 WEITRON INTERNATIONAL CO., LTD.

Power Bipolar Transistor, 10A I(C), 60V V(BR)CEO, 1-Element, PNP, Silicon, TO-252, Plastic/Epoxy, 2 Pin

Part Image MJD2955T4 onsemi

Power Bipolar Transistor, 10A I(C), 60V V(BR)CEO, 1-Element, PNP, Silicon, Plastic/Epoxy, 2 Pin

Part Image MJD2955 onsemi

Power Bipolar Transistor, 10A I(C), 60V V(BR)CEO, 1-Element, PNP, Silicon, Plastic/Epoxy, 2 Pin

Part Image MJD2955T4 STMicroelectronics

Power Bipolar Transistor, 10A I(C), 60V V(BR)CEO, 1-Element, PNP, Silicon, TO-252AA, Plastic/Epoxy, 2 Pin

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