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MJD2955T4G - onsemi

Description: Lead Formed for Surface Mount Applications in Plastic Sleeves (No Suffix); DC Current Gain Specified to 10 Amperes; Straight Lead Version in Plastic Sleeves ("-1" Suffix); Electrically Similar to MJE2955 and MJE3055; Lead Formed Version Available in 16 mm Tape and Reel ("T4" Suffix); High Current Gain-Bandwidth Product fT = 2.0 MHz (Min) @ IC = 500 mAdc; NJV Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable; These are PbFr

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MJD2955T4G - onsemi PCB footprint - Other - Other - DPAK (SINGLE GAUGE)_2023-1
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MJD2955T4G Details

  • Manufacturer Part Number:

    MJD2955T4G

  • Brand Name:

    onsemi

  • Pbfree Code:

    Yes

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Part Package Code:

    DPAK (SINGLE GAUGE) TO-252

  • Pin Count:

    3

  • Manufacturer Package Code:

    369C

  • Country Of Origin:

    Mainland China

  • ECCN Code:

    EAR99

  • Factory Lead Time:

    8 Weeks

  • Manufacturer:

    onsemi

  • YTEOL:

    4

  • Case Connection:

    COLLECTOR

  • Collector Current-Max (IC):

    10 A

  • Collector-Emitter Voltage-Max:

    60 V

  • Configuration:

    SINGLE

  • DC Current Gain-Min (hFE):

    5

  • JESD-30 Code:

    R-PSSO-G2

  • JESD-609 Code:

    e3

  • Moisture Sensitivity Level:

    1

  • Number of Elements:

    1

  • Number of Terminals:

    2

  • Operating Temperature-Max:

    150 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE

  • Peak Reflow Temperature (Cel):

    260

  • Polarity/Channel Type:

    PNP

  • Power Dissipation-Max (Abs):

    20 W

  • Qualification Status:

    Not Qualified

  • Surface Mount:

    YES

  • Terminal Finish:

    Matte Tin (Sn) - annealed

  • Terminal Form:

    GULL WING

  • Terminal Position:

    SINGLE

  • Time@Peak Reflow Temperature-Max (s):

    30

  • Transistor Application:

    AMPLIFIER

  • Transistor Element Material:

    SILICON

  • Transition Frequency-Nom (fT):

    2 MHz

MJD2955T4G Frequently Asked Questions (FAQs)

  • The maximum operating temperature range for the MJD2955T4G is -55°C to 150°C.
  • To ensure proper biasing, connect the base to the emitter through a resistor (Rb) and connect the collector to the positive supply voltage (Vcc) through a resistor (Rc). The recommended biasing conditions are Vbe = 0.7V and Vce = 2V.
  • The maximum current handling capability of the MJD2955T4G is 10A.
  • To protect the MJD2955T4G from ESD, handle the device by the body, use an anti-static wrist strap or mat, and store the device in an anti-static bag or container.
  • The recommended storage temperature range for the MJD2955T4G is -40°C to 100°C.

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MJD2955T4G Overview

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Part Image MJD2955 Rochester Electronics LLC

10A, 60V, PNP, Si, POWER TRANSISTOR, PLASTIC, CASE 369C-01, DPAK-3

Part Image MJD2955TF Fairchild Semiconductor Corporation

Power Bipolar Transistor, 10A I(C), 60V V(BR)CEO, 1-Element, PNP, Silicon, Plastic/Epoxy, 2 Pin

Part Image MJD2955 WEITRON INTERNATIONAL CO., LTD.

Power Bipolar Transistor, 10A I(C), 60V V(BR)CEO, 1-Element, PNP, Silicon, TO-252, Plastic/Epoxy, 2 Pin

Part Image MJD2955 onsemi

Power Bipolar Transistor, 10A I(C), 60V V(BR)CEO, 1-Element, PNP, Silicon, Plastic/Epoxy, 2 Pin

Part Image MJD2955T4 STMicroelectronics

Power Bipolar Transistor, 10A I(C), 60V V(BR)CEO, 1-Element, PNP, Silicon, TO-252AA, Plastic/Epoxy, 2 Pin

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