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MJD350-13 - Diodes Incorporated

Description: Bipolar (BJT) Transistor PNP 300 V 500 mA 15 W Surface Mount TO-252-3

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MJD350-13 - Diodes Incorporated PCB footprint - Other - Other - MJD350-13
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MJD350-13 - Diodes Incorporated  - 3D model - Other - MJD350-13
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MJD350-13 Details

  • Manufacturer Part Number:

    MJD350-13

  • Pbfree Code:

    Yes

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Package Description:

    DPAK-3

  • Pin Count:

    3

  • Country Of Origin:

    Mainland China

  • ECCN Code:

    EAR99

  • Factory Lead Time:

    12 Weeks

  • Manufacturer:

    Diodes Incorporated

  • YTEOL:

    4

  • Case Connection:

    COLLECTOR

  • Collector Current-Max (IC):

    0.5 A

  • Collector-Emitter Voltage-Max:

    300 V

  • Configuration:

    SINGLE

  • DC Current Gain-Min (hFE):

    30

  • JESD-30 Code:

    R-PSSO-G2

  • JESD-609 Code:

    e3

  • Moisture Sensitivity Level:

    1

  • Number of Elements:

    1

  • Number of Terminals:

    2

  • Operating Temperature-Max:

    150 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE

  • Peak Reflow Temperature (Cel):

    260

  • Polarity/Channel Type:

    PNP

  • Power Dissipation-Max (Abs):

    15 W

  • Qualification Status:

    Not Qualified

  • Surface Mount:

    YES

  • Terminal Finish:

    MATTE TIN

  • Terminal Form:

    GULL WING

  • Terminal Position:

    SINGLE

  • Time@Peak Reflow Temperature-Max (s):

    30

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

MJD350-13 Frequently Asked Questions (FAQs)

  • The recommended PCB footprint for the MJD350-13 is a standard SOT23 package with a 1.3mm x 1.3mm pad size, with a 0.5mm spacing between pads.
  • To ensure proper biasing, connect the base of the transistor to a voltage divider network that sets the base voltage to around 0.7V to 1.0V, depending on the application requirements.
  • The maximum safe operating area (SOA) for the MJD350-13 is defined by the maximum collector-emitter voltage (Vce) of 30V, maximum collector current (Ic) of 1A, and maximum power dissipation (Pd) of 625mW.
  • Yes, the MJD350-13 can be used as a switch in high-frequency applications up to 100MHz, but it's essential to consider the transistor's transition frequency (ft) of 200MHz and ensure proper PCB layout and decoupling to minimize parasitic effects.
  • To handle thermal management, ensure good thermal conductivity between the transistor and the PCB, use a heat sink if necessary, and keep the ambient temperature within the recommended operating range of -55°C to 150°C.

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MJD350-13 Overview

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