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MJD45H11-1G - onsemi

Description: Bipolar (BJT) Transistor NPN 80 V 8 A 90MHz 1.75 W Through Hole IPAK

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PCB Footprints
MJD45H11-1G - onsemi PCB footprint - Transistor Outline, Vertical - Transistor Outline, Vertical - IPAK CASE 369D ISSUE C_2026
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3D Models
MJD45H11-1G - onsemi  - 3D model - Transistor Outline, Vertical - IPAK CASE 369D ISSUE C_2026
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MJD45H11-1G Details

  • Manufacturer Part Number:

    MJD45H11-1G

  • Brand Name:

    onsemi

  • Pbfree Code:

    Yes

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Part Package Code:

    DPAK INSERTION MOUNT

  • Pin Count:

    4

  • Manufacturer Package Code:

    369

  • Country Of Origin:

    Mainland China, Malaysia

  • ECCN Code:

    EAR99

  • Factory Lead Time:

    12 Weeks

  • Manufacturer:

    onsemi

  • YTEOL:

    6

  • Case Connection:

    COLLECTOR

  • Collector Current-Max (IC):

    8 A

  • Collector-Emitter Voltage-Max:

    80 V

  • Configuration:

    SINGLE

  • DC Current Gain-Min (hFE):

    40

  • JESD-30 Code:

    R-PSIP-T3

  • JESD-609 Code:

    e3

  • Moisture Sensitivity Level:

    1

  • Number of Elements:

    1

  • Number of Terminals:

    3

  • Operating Temperature-Max:

    150 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    IN-LINE

  • Peak Reflow Temperature (Cel):

    260

  • Polarity/Channel Type:

    PNP

  • Power Dissipation-Max (Abs):

    20 W

  • Qualification Status:

    Not Qualified

  • Surface Mount:

    NO

  • Terminal Finish:

    Matte Tin (Sn) - annealed

  • Terminal Form:

    THROUGH-HOLE

  • Terminal Position:

    SINGLE

  • Time@Peak Reflow Temperature-Max (s):

    30

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

  • Transition Frequency-Nom (fT):

    40 MHz

MJD45H11-1G Frequently Asked Questions (FAQs)

  • The maximum operating temperature range for the MJD45H11-1G is -55°C to 150°C.
  • To ensure reliability, follow the recommended assembly and soldering procedures, and ensure that the device is operated within the specified voltage and current ratings. Additionally, consider using a thermal management strategy to keep the device within its recommended operating temperature range.
  • The recommended PCB layout for the MJD45H11-1G involves using a multi-layer board with a solid ground plane, and placing the device near a heat sink or thermal pad to facilitate heat dissipation. A thermal management strategy such as heat sinking or heat spreading can also be employed to keep the device within its recommended operating temperature range.
  • To protect the MJD45H11-1G from ESD, handle the device with anti-static wrist straps, mats, or bags, and ensure that the PCB is designed with ESD protection in mind, such as using ESD protection diodes or resistors.
  • Store the MJD45H11-1G in its original packaging or in a dry, cool place, away from direct sunlight and moisture. Handle the device with clean, dry gloves or anti-static wrist straps to prevent ESD damage.

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MJD45H11-1G Overview

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