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MJE13009G - onsemi

Description: Inductive Switching Matrix 3 to 12 Amp, 25 and 100?C tc @ 8 A, 100?C is 120 ns (Typ).; Reverse Bias SOA with Inductive Loads @ TC = 100°C; VCEO(sus) 400 V and 300 V; 700 V Blocking Capability; SOA and Switching Applications Information.; Pb-Free Package is Available

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MJE13009G Alternates

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Image Part Number Model
Part Image MJE13009 Mospec Semiconductor Corp

Power Bipolar Transistor, 12A I(C), 400V V(BR)CEO, 1-Element, NPN, Silicon, TO-220AB, Plastic/Epoxy, 3 Pin
Part Image MJE13008 STMicroelectronics

Power Bipolar Transistor, 12A I(C), 300V V(BR)CEO, 1-Element, NPN, Silicon, TO-220AB, Plastic/Epoxy, 3 Pin
Part Image MJE13008 Central Semiconductor Corp

Power Bipolar Transistor, 12A I(C), 300V V(BR)CEO, 1-Element, NPN, Silicon, TO-220AB, Plastic/Epoxy, 3 Pin
Part Image MJE13009 NXP Semiconductors

Power Bipolar Transistor, 12A I(C), 400V V(BR)CEO, 1-Element, NPN, Silicon, TO-220AB, Plastic/Epoxy, 3 Pin
Part Image MJE13009 Baneasa SA

Power Bipolar Transistor, 12A I(C), 1-Element, NPN, Silicon, TO-220AB, Plastic/Epoxy, 3 Pin
For a full list of alternate parts for MJE13009G, check out Findchips.com