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MJE18008G - onsemi

Description: Two Package Choices: Standard TO-220 or Isolated TO-220; Improved Efficiency Due to Low Base Drive Requirements: - High and Flat DC Current Gain hFE - Fast Switching - No Coil Required in Base Circuit for Turn-Off (No Current Tail); Tight Parametric Distributions are Consistent Lot-to-Lot; MJF18008, Case 221D, is UL Recognized at 3500 VRMS: File #E69369; Pb-Free Packages are Available

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PCB Footprints
MJE18008G - onsemi PCB footprint - Transistor Outline, Vertical - Transistor Outline, Vertical - TO−220_1
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MJE18008G - onsemi  - 3D model - Transistor Outline, Vertical - TO−220_1
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MJE18008G Details

  • Manufacturer Part Number:

    MJE18008G

  • Brand Name:

    onsemi

  • Pbfree Code:

    Yes

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Part Package Code:

    TO-220 3 LEAD STANDARD

  • Package Description:

    ROHS COMPLIANT, CASE 221A-09, 3 PIN

  • Pin Count:

    3

  • Manufacturer Package Code:

    221A

  • Country Of Origin:

    Mainland China

  • ECCN Code:

    EAR99

  • Manufacturer:

    onsemi

  • YTEOL:

    4

  • Additional Feature:

    LEADFORM OPTIONS ARE AVAILABLE

  • Case Connection:

    COLLECTOR

  • Collector Current-Max (IC):

    8 A

  • Collector-Emitter Voltage-Max:

    450 V

  • Configuration:

    SINGLE

  • DC Current Gain-Min (hFE):

    6

  • JEDEC-95 Code:

    TO-220AB

  • JESD-30 Code:

    R-PSFM-T3

  • JESD-609 Code:

    e3

  • Number of Elements:

    1

  • Number of Terminals:

    3

  • Operating Temperature-Max:

    150 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    FLANGE MOUNT

  • Polarity/Channel Type:

    NPN

  • Power Dissipation-Max (Abs):

    125 W

  • Qualification Status:

    Not Qualified

  • Surface Mount:

    NO

  • Terminal Finish:

    Matte Tin (Sn) - annealed

  • Terminal Form:

    THROUGH-HOLE

  • Terminal Position:

    SINGLE

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

  • Transition Frequency-Nom (fT):

    13 MHz

MJE18008G Frequently Asked Questions (FAQs)

  • The maximum safe operating area (SOA) for the MJE18008G is not explicitly stated in the datasheet, but it can be estimated based on the device's thermal and electrical characteristics. A general guideline is to ensure that the device operates within the recommended voltage and current ratings, and to avoid operating the device in the saturation region for extended periods.
  • To ensure the MJE18008G is properly biased for linear operation, you should ensure that the base-emitter voltage (VBE) is within the recommended range (typically around 0.7V), and that the collector-emitter voltage (VCE) is sufficient to maintain the device in the active region. Additionally, the base current should be limited to prevent saturation.
  • The recommended storage temperature range for the MJE18008G is -55°C to 150°C, as specified in the datasheet. It's essential to store the device within this range to prevent damage or degradation.
  • While the MJE18008G is primarily designed for linear applications, it can be used in switching applications with caution. However, the device's switching characteristics, such as rise and fall times, may not be optimized for high-frequency switching. It's essential to carefully evaluate the device's performance in your specific application and ensure it meets your requirements.
  • To handle ESD protection for the MJE18008G, it's essential to follow proper handling and storage procedures to prevent electrostatic discharge (ESD) damage. This includes using ESD-safe materials, grounding yourself before handling the device, and storing the device in an ESD-safe environment.

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Part Image MJE18008 onsemi

Power Bipolar Transistor, 8A I(C), 450V V(BR)CEO, 1-Element, NPN, Silicon, TO-220AB, Plastic/Epoxy, 3 Pin