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MJE180G - onsemi

Description: Annular Construction for Low Leakages - ICBO = 100 nA (Max) @ Rated VCB; DC Current Gain - hFE = 30 (Min) @ IC = 0.5 Adc hFE = 12 (Min) @ IC = 1.5 Adc; Current-Gain - Bandwidth Product - fT = 50 MHz (Min) @ IC = 100 mAdc; Collector-Emitter Sustaining Voltage - VCEO(sus) = 60 Vdc - MJE171, MJE181 VCEO(sus) = 80 Vdc - MJE172, MJE182; Pb-Free Packages are Available

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PCB Footprints
MJE180G - onsemi PCB footprint - Transistor Outline, Vertical - Transistor Outline, Vertical - TO-225 CASE 77-09
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3D Models
MJE180G - onsemi  - 3D model - Transistor Outline, Vertical - TO-225 CASE 77-09
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MJE180G Details

  • Manufacturer Part Number:

    MJE180G

  • Brand Name:

    onsemi

  • Pbfree Code:

    Yes

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Part Package Code:

    TO-225

  • Package Description:

    CASE 77-09, 3 PIN

  • Pin Count:

    3

  • Manufacturer Package Code:

    77-09

  • Country Of Origin:

    Mainland China

  • ECCN Code:

    EAR99

  • Manufacturer:

    onsemi

  • YTEOL:

    4

  • Collector Current-Max (IC):

    3 A

  • Collector-Emitter Voltage-Max:

    40 V

  • Configuration:

    SINGLE

  • DC Current Gain-Min (hFE):

    12

  • JEDEC-95 Code:

    TO-225AA

  • JESD-30 Code:

    R-PSFM-T3

  • JESD-609 Code:

    e3

  • Number of Elements:

    1

  • Number of Terminals:

    3

  • Operating Temperature-Max:

    150 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    FLANGE MOUNT

  • Polarity/Channel Type:

    NPN

  • Power Dissipation-Max (Abs):

    1.5 W

  • Qualification Status:

    Not Qualified

  • Surface Mount:

    NO

  • Terminal Finish:

    Matte Tin (Sn) - annealed

  • Terminal Form:

    THROUGH-HOLE

  • Terminal Position:

    SINGLE

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

  • Transition Frequency-Nom (fT):

    50 MHz

MJE180G Frequently Asked Questions (FAQs)

  • The maximum safe operating area (SOA) for the MJE180G is not explicitly stated in the datasheet, but it can be estimated based on the device's thermal and electrical characteristics. As a general guideline, the SOA is typically limited by the device's maximum junction temperature, collector-emitter voltage, and collector current.
  • To ensure the MJE180G is properly biased for linear operation, you should ensure that the base-emitter voltage (VBE) is within the recommended range (typically around 0.7V), and the collector-emitter voltage (VCE) is within the recommended range (typically around 10-20V). Additionally, the collector current should be limited to the recommended maximum value to prevent overheating.
  • The recommended heatsink design for the MJE180G depends on the specific application and operating conditions. However, as a general guideline, a heatsink with a thermal resistance of around 10-20°C/W is recommended. The heatsink should also be designed to provide good thermal contact with the device, and should be mounted using a suitable thermal interface material.
  • While the MJE180G is primarily designed for linear applications, it can be used in switching applications with some caution. However, the device's switching characteristics, such as its turn-on and turn-off times, may not be as well-suited for high-frequency switching applications as other devices specifically designed for switching. Additionally, the device's maximum collector current and voltage ratings should be carefully considered to ensure reliable operation.
  • To protect the MJE180G from electrostatic discharge (ESD), it is recommended to handle the device with anti-static precautions, such as using an anti-static wrist strap or mat. Additionally, the device should be stored in an anti-static package, and should be connected to a ground plane or other ESD protection circuitry in the application.

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