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MJE181G - onsemi

Description: Annular Construction for Low Leakages - ICBO = 100 nA (Max) @ Rated VCB; DC Current Gain - hFE = 30 (Min) @ IC = 0.5 Adc hFE = 12 (Min) @ IC = 1.5 Adc; Current-Gain - Bandwidth Product - fT = 50 MHz (Min) @ IC = 100 mAdc; Collector-Emitter Sustaining Voltage - VCEO(sus) = 60 Vdc - MJE171, MJE181 VCEO(sus) = 80 Vdc - MJE172, MJE182; Pb-Free Packages are Available

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MJE181G - onsemi PCB footprint - Other - Other - MJE181G-5
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MJE181G Details

  • Manufacturer Part Number:

    MJE181G

  • Brand Name:

    onsemi

  • Pbfree Code:

    Yes

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Part Package Code:

    TO-225

  • Package Description:

    CASE 77-09, 3 PIN

  • Pin Count:

    3

  • Manufacturer Package Code:

    77-09

  • Country Of Origin:

    Mainland China

  • ECCN Code:

    EAR99

  • Manufacturer:

    onsemi

  • YTEOL:

    4

  • Collector Current-Max (IC):

    3 A

  • Collector-Emitter Voltage-Max:

    60 V

  • Configuration:

    SINGLE

  • DC Current Gain-Min (hFE):

    12

  • JEDEC-95 Code:

    TO-225AA

  • JESD-30 Code:

    R-PSFM-T3

  • JESD-609 Code:

    e3

  • Number of Elements:

    1

  • Number of Terminals:

    3

  • Operating Temperature-Max:

    150 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    FLANGE MOUNT

  • Polarity/Channel Type:

    NPN

  • Power Dissipation-Max (Abs):

    1.5 W

  • Qualification Status:

    Not Qualified

  • Surface Mount:

    NO

  • Terminal Finish:

    Matte Tin (Sn) - annealed

  • Terminal Form:

    THROUGH-HOLE

  • Terminal Position:

    SINGLE

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

  • Transition Frequency-Nom (fT):

    50 MHz

MJE181G Frequently Asked Questions (FAQs)

  • The maximum safe operating area (SOA) for the MJE181G is not explicitly stated in the datasheet, but it can be estimated based on the device's thermal and electrical characteristics. As a general guideline, the SOA is typically limited by the device's maximum junction temperature, collector-emitter voltage, and collector current.
  • To ensure the MJE181G is properly biased for linear operation, you should ensure that the base-emitter voltage (VBE) is within the recommended range (typically around 0.7V), and the collector-emitter voltage (VCE) is sufficient to maintain a linear operating region. Additionally, the base current should be limited to prevent saturation.
  • The recommended storage temperature range for the MJE181G is -55°C to 150°C, as specified in the datasheet. It's essential to store the device within this range to prevent damage or degradation.
  • Yes, the MJE181G can be used as a switch, but it's essential to consider the device's switching characteristics, such as the turn-on and turn-off times, and the collector-emitter saturation voltage. Additionally, you should ensure that the device is properly biased and that the base current is sufficient to maintain a low saturation voltage.
  • To handle ESD protection when handling the MJE181G, it's essential to follow proper ESD handling procedures, such as using an ESD wrist strap, ESD mat, or ESD bag. Additionally, you should ensure that the device is stored in an ESD-protected environment, and that all equipment and tools used to handle the device are ESD-protected.

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