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MJE182G - onsemi

Description: Annular Construction for Low Leakages - ICBO = 100 nA (Max) @ Rated VCB; DC Current Gain - hFE = 30 (Min) @ IC = 0.5 Adc hFE = 12 (Min) @ IC = 1.5 Adc; Current-Gain - Bandwidth Product - fT = 50 MHz (Min) @ IC = 100 mAdc; Collector-Emitter Sustaining Voltage - VCEO(sus) = 60 Vdc - MJE171, MJE181 VCEO(sus) = 80 Vdc - MJE172, MJE182; Pb-Free Packages are Available

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PCB Footprints
MJE182G - onsemi PCB footprint - Transistor Outline, Vertical - Transistor Outline, Vertical - TO-225 CASE 77-09
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3D Models
MJE182G - onsemi  - 3D model - Transistor Outline, Vertical - TO-225 CASE 77-09
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MJE182G Details

  • Manufacturer Part Number:

    MJE182G

  • Brand Name:

    onsemi

  • Pbfree Code:

    Yes

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Part Package Code:

    TO-225

  • Package Description:

    CASE 77-09, 3 PIN

  • Pin Count:

    3

  • Manufacturer Package Code:

    77-09

  • Country Of Origin:

    Mainland China

  • ECCN Code:

    EAR99

  • Manufacturer:

    onsemi

  • YTEOL:

    4

  • Collector Current-Max (IC):

    3 A

  • Collector-Emitter Voltage-Max:

    80 V

  • Configuration:

    SINGLE

  • DC Current Gain-Min (hFE):

    12

  • JEDEC-95 Code:

    TO-225AA

  • JESD-30 Code:

    R-PSFM-T3

  • JESD-609 Code:

    e3

  • Number of Elements:

    1

  • Number of Terminals:

    3

  • Operating Temperature-Max:

    150 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    FLANGE MOUNT

  • Polarity/Channel Type:

    NPN

  • Power Dissipation-Max (Abs):

    1.5 W

  • Qualification Status:

    Not Qualified

  • Surface Mount:

    NO

  • Terminal Finish:

    Matte Tin (Sn) - annealed

  • Terminal Form:

    THROUGH-HOLE

  • Terminal Position:

    SINGLE

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

  • Transition Frequency-Nom (fT):

    50 MHz

MJE182G Frequently Asked Questions (FAQs)

  • The maximum safe operating area (SOA) for the MJE182G is not explicitly stated in the datasheet. However, it can be estimated based on the device's thermal and electrical characteristics. A general guideline is to ensure that the device operates within the recommended voltage and current ratings, and to avoid operating in the saturation region for extended periods.
  • To ensure the MJE182G is properly biased for linear operation, it's essential to set the base-emitter voltage (VBE) and collector-emitter voltage (VCE) within the recommended ranges. Typically, VBE should be around 0.65-0.7V, and VCE should be around 1-2V. Additionally, ensure the collector current is within the recommended range, and the device is not operated in saturation or cutoff regions.
  • The recommended storage temperature for the MJE182G is -55°C to 150°C. It's essential to store the device within this temperature range to prevent damage or degradation.
  • While the MJE182G is primarily designed for linear applications, it can be used in switching applications with caution. However, it's essential to ensure the device is properly biased and operated within its recommended electrical and thermal characteristics to avoid overheating or damage.
  • The recommended soldering temperature for the MJE182G is 260°C (500°F) for a maximum of 10 seconds. It's essential to follow proper soldering techniques and temperature control to avoid damaging the device.

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MJE182G Overview

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Part Image MJE182 Micro Commercial Components

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For a full list of alternate parts for MJE182G, check out Findchips.com