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MJE2955T - STMicroelectronics

Description: PNP power transistor,MJE2955T 10A STMicroelectronics MJE2955T PNP Bipolar Transistor, 10 A 60 V, 3-Pin TO-220

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MJE2955T - STMicroelectronics - PCB symbol
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PCB Footprints
MJE2955T - STMicroelectronics PCB footprint - Transistor Outline, Vertical - Transistor Outline, Vertical - TO-220
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MJE2955T - STMicroelectronics - 3D model - Transistor Outline, Vertical - TO-220
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MJE2955T Details

  • Manufacturer Part Number:

    MJE2955T

  • Brand Name:

    STMicroelectronics

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Part Package Code:

    TO-220AB

  • Package Description:

    TO-220, 3 PIN

  • Pin Count:

    3

  • Country Of Origin:

    Mainland China

  • ECCN Code:

    EAR99

  • HTS Code:

    8541.29.00.95

  • Factory Lead Time:

    14 Weeks

  • Manufacturer:

    STMicroelectronics

  • YTEOL:

    9

  • Collector Current-Max (IC):

    10 A

  • Collector-Emitter Voltage-Max:

    60 V

  • Configuration:

    SINGLE

  • DC Current Gain-Min (hFE):

    5

  • JEDEC-95 Code:

    TO-220AB

  • JESD-30 Code:

    R-PSFM-T3

  • JESD-609 Code:

    e3

  • Number of Elements:

    1

  • Number of Terminals:

    3

  • Operating Temperature-Max:

    150 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    FLANGE MOUNT

  • Polarity/Channel Type:

    PNP

  • Power Dissipation Ambient-Max:

    75 W

  • Power Dissipation-Max (Abs):

    75 W

  • Qualification Status:

    Not Qualified

  • Surface Mount:

    NO

  • Terminal Finish:

    Matte Tin (Sn) - annealed

  • Terminal Form:

    THROUGH-HOLE

  • Terminal Position:

    SINGLE

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

  • Transition Frequency-Nom (fT):

    2 MHz

  • VCEsat-Max:

    8 V

MJE2955T Frequently Asked Questions (FAQs)

  • The maximum safe operating area (SOA) for the MJE2955T is not explicitly stated in the datasheet, but it can be estimated based on the device's thermal resistance, maximum junction temperature, and power dissipation. A safe operating area curve can be constructed using the device's thermal resistance, maximum junction temperature, and power dissipation.
  • To ensure the MJE2955T is properly biased for linear operation, the base-emitter voltage (VBE) should be set to around 0.7V, and the collector-emitter voltage (VCE) should be set to a value that allows the transistor to operate in the active region. The base current should be limited to prevent saturation, and the collector current should be limited to prevent overheating.
  • The recommended PCB layout for the MJE2955T involves placing the transistor close to the heat sink, using a thermal pad or thermal interface material to improve heat transfer, and ensuring good airflow around the device. The PCB should also be designed to minimize thermal resistance and ensure good electrical isolation.
  • To protect the MJE2955T from electrostatic discharge (ESD), it is recommended to use ESD protection devices such as TVS diodes or ESD protection arrays, and to follow proper handling and storage procedures to prevent ESD damage.
  • The reliability and lifespan expectations for the MJE2955T depend on various factors such as operating conditions, temperature, and usage patterns. However, STMicroelectronics provides reliability data and lifespan estimates in the device's datasheet and application notes.

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MJE2955T Overview

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About STMicroelectronics

STMicroelectronics (ST) is a global semiconductor company that designs, manufactures, and markets a broad range of integrated circuits (ICs), discrete devices, and other electronic components. STMicroelectronics offers a diverse portfolio of semiconductor products covering a wide range of applications and industries. Their product categories include microcontrollers, analog and mixed-signal ICs, MEMS (Micro-Electro-Mechanical Systems) sensors, power management ICs, RF (Radio Frequency) transceivers, aut

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