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MJE3055T - onsemi

Description: Obsolete - Bipolar Power Transistor, NPN, 10 A, 60 V, 75 Watt

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MJE3055T - onsemi PCB footprint - Transistor Outline, Vertical - Transistor Outline, Vertical - TO-220AB CASE221A-07+
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3D Models
MJE3055T - onsemi  - 3D model - Transistor Outline, Vertical - TO-220AB CASE221A-07+
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MJE3055T Details

  • Manufacturer Part Number:

    MJE3055T

  • Brand Name:

    onsemi

  • Pbfree Code:

    No

  • Part Life Cycle Code:

    Obsolete

  • Part Package Code:

    TO-220 3 LEAD STANDARD

  • Package Description:

    PLASTIC, CASE 221A-09, 3 PIN

  • Pin Count:

    3

  • Manufacturer Package Code:

    221A

  • ECCN Code:

    EAR99

  • HTS Code:

    8541.21.00.95

  • Manufacturer:

    onsemi

  • YTEOL:

    0

  • Case Connection:

    COLLECTOR

  • Collector Current-Max (IC):

    10 A

  • Collector-Emitter Voltage-Max:

    60 V

  • Configuration:

    SINGLE

  • DC Current Gain-Min (hFE):

    5

  • JEDEC-95 Code:

    TO-220AB

  • JESD-30 Code:

    R-PSFM-T3

  • JESD-609 Code:

    e0

  • Number of Elements:

    1

  • Number of Terminals:

    3

  • Operating Temperature-Max:

    150 °C

  • Operating Temperature-Min:

    -55 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    FLANGE MOUNT

  • Peak Reflow Temperature (Cel):

    235

  • Polarity/Channel Type:

    NPN

  • Power Dissipation Ambient-Max:

    0.6 W

  • Power Dissipation-Max (Abs):

    75 W

  • Qualification Status:

    Not Qualified

  • Surface Mount:

    NO

  • Terminal Finish:

    Tin/Lead (Sn/Pb)

  • Terminal Form:

    THROUGH-HOLE

  • Terminal Position:

    SINGLE

  • Time@Peak Reflow Temperature-Max (s):

    30

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

  • Transition Frequency-Nom (fT):

    2 MHz

MJE3055T Frequently Asked Questions (FAQs)

  • The maximum safe operating area (SOA) for the MJE3055T is not explicitly stated in the datasheet, but it can be estimated based on the device's thermal resistance and maximum junction temperature. A general rule of thumb is to limit the device to 80% of its maximum ratings to ensure reliable operation.
  • To ensure the MJE3055T is properly biased for linear operation, you should ensure that the base-emitter voltage (VBE) is between 0.6V to 0.8V, and the collector-emitter voltage (VCE) is at least 1V to 2V above the base-emitter voltage. Additionally, the collector current should be limited to the recommended maximum value to prevent thermal runaway.
  • The recommended heatsink design for the MJE3055T depends on the specific application and power dissipation requirements. However, as a general guideline, a heatsink with a thermal resistance of 1°C/W or lower is recommended. The heatsink should also be designed to provide good thermal contact with the device, and should be mounted using a thermally conductive interface material.
  • While the MJE3055T is primarily designed for linear applications, it can be used in switching applications with some caution. However, the device's switching characteristics, such as its rise and fall times, may not be optimized for high-frequency switching. Additionally, the device's maximum collector-emitter voltage and current ratings should be carefully considered to ensure reliable operation.
  • To protect the MJE3055T from electrostatic discharge (ESD), it is recommended to handle the device with anti-static precautions, such as using an anti-static wrist strap or mat. Additionally, the device should be stored in an anti-static package, and should be connected to a ground plane or other ESD protection circuitry in the application.

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MJE3055T Overview

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