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MJE350 - Multicomp Pro

Description: TRANSISTOR, PNP, -300V, -0.5A, TO-126

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PCB Footprints
MJE350 - Multicomp Pro PCB footprint - Transistor Outline, Vertical - Transistor Outline, Vertical - TO-126
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3D Models
MJE350 - Multicomp Pro  - 3D model - Transistor Outline, Vertical - TO-126
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MJE350 Details

  • Manufacturer Part Number:

    MJE350

  • Part Life Cycle Code:

    Active

  • ECCN Code:

    EAR99

  • Manufacturer:

    SPC Multicomp

  • YTEOL:

    4

  • Collector Current-Max (IC):

    0.5 A

  • Collector-Emitter Voltage-Max:

    300 V

  • Configuration:

    SINGLE

  • DC Current Gain-Min (hFE):

    30

  • JEDEC-95 Code:

    TO-126

  • JESD-30 Code:

    R-PSFM-T3

  • Number of Elements:

    1

  • Number of Terminals:

    3

  • Operating Temperature-Max:

    150 °C

  • Operating Temperature-Min:

    -65 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    FLANGE MOUNT

  • Polarity/Channel Type:

    PNP

  • Surface Mount:

    NO

  • Terminal Form:

    THROUGH-HOLE

  • Terminal Position:

    SINGLE

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

MJE350 Frequently Asked Questions (FAQs)

  • The MJE350 can operate safely between -55°C to 150°C, but the maximum junction temperature should not exceed 150°C for reliable operation.
  • To ensure linear operation, the MJE350 should be biased with a base-emitter voltage (Vbe) between 0.6V to 0.8V, and a collector-emitter voltage (Vce) that is at least 1V higher than the base-emitter voltage.
  • The MJE350 should be stored in a dry, cool place with a temperature range of -40°C to 30°C and relative humidity below 60% to prevent moisture damage.
  • Yes, the MJE350 can be used as a switch, but it's not recommended for high-frequency switching applications due to its relatively slow switching times (tf ≈ 10ns, tr ≈ 20ns). It's better suited for low-frequency switching or linear amplification applications.
  • To prevent electrostatic discharge (ESD) damage, handle the MJE350 with an anti-static wrist strap or mat, and avoid touching the device's pins or leads. Store the device in an anti-static bag or tube when not in use.

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MJE350 Overview

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Part Image MJE350 General Transistor Corp

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Part Image MJE350STU onsemi

Power Bipolar Transistor, 0.5A I(C), 300V V(BR)CEO, 1-Element, PNP, Silicon, TO-126, Plastic/Epoxy, 3 Pin

Part Image KSE350STU onsemi

Power Bipolar Transistor, 0.5A I(C), 300V V(BR)CEO, 1-Element, PNP, Silicon, TO-126, Plastic/Epoxy, 3 Pin

Part Image KSE350S Fairchild Semiconductor Corporation

Power Bipolar Transistor, 0.5A I(C), 300V V(BR)CEO, 1-Element, PNP, Silicon, TO-126, Plastic/Epoxy, 3 Pin

Part Image MJE350 onsemi

Power Bipolar Transistor, 0.5A I(C), 300V V(BR)CEO, 1-Element, PNP, Silicon, TO-225, Plastic/Epoxy, 3 Pin

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