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MJE350 - onsemi

Description: Trans GP BJT PNP 300V 0.5A 3-Pin TO-225 Bulk

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PCB Footprints
MJE350 - onsemi PCB footprint - Transistor Outline, Vertical - Transistor Outline, Vertical - TO126
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MJE350 - onsemi  - 3D model - Transistor Outline, Vertical - TO126
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MJE350 Details

  • Manufacturer Part Number:

    MJE350

  • Brand Name:

    ON Semiconductor

  • Pbfree Code:

    No

  • Part Life Cycle Code:

    Obsolete

  • Part Package Code:

    TO-225

  • Package Description:

    PLASTIC, CASE 77-09, 3 PIN

  • Pin Count:

    3

  • Manufacturer Package Code:

    77-09

  • ECCN Code:

    EAR99

  • Manufacturer:

    onsemi

  • YTEOL:

    0

  • Collector Current-Max (IC):

    0.5 A

  • Collector-Emitter Voltage-Max:

    300 V

  • Configuration:

    SINGLE

  • DC Current Gain-Min (hFE):

    30

  • JEDEC-95 Code:

    TO-225

  • JESD-30 Code:

    R-PSFM-T3

  • JESD-609 Code:

    e0

  • Number of Elements:

    1

  • Number of Terminals:

    3

  • Operating Temperature-Max:

    150 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    FLANGE MOUNT

  • Peak Reflow Temperature (Cel):

    235

  • Polarity/Channel Type:

    PNP

  • Power Dissipation-Max (Abs):

    20 W

  • Qualification Status:

    Not Qualified

  • Surface Mount:

    NO

  • Terminal Finish:

    Tin/Lead (Sn/Pb)

  • Terminal Form:

    THROUGH-HOLE

  • Terminal Position:

    SINGLE

  • Time@Peak Reflow Temperature-Max (s):

    30

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

MJE350 Frequently Asked Questions (FAQs)

  • The maximum SOA for the MJE350 is not explicitly stated in the datasheet, but it can be estimated based on the device's thermal resistance and maximum junction temperature. A safe operating area can be assumed to be around 10A and 100V.
  • To ensure linear operation, the MJE350 should be biased in the active region, with a base-emitter voltage (Vbe) between 0.6V and 0.8V, and a collector-emitter voltage (Vce) greater than 1V. The base current should be limited to prevent saturation.
  • The recommended heatsink for the MJE350 depends on the application and power dissipation requirements. A heatsink with a thermal resistance of around 10°C/W or lower is recommended. The TO-220 package of the MJE350 has a thermal pad that should be connected to the heatsink.
  • While the MJE350 is primarily designed for linear applications, it can be used in switching applications with some limitations. The device's switching speed is relatively slow, with a turn-on time of around 10μs and a turn-off time of around 20μs. The MJE350 is not suitable for high-frequency switching applications.
  • To protect the MJE350 from ESD, handle the device by the body or use an anti-static wrist strap. Ensure the workspace and equipment are grounded, and use anti-static packaging and storage materials. Avoid touching the device's pins or leads, and use ESD-protected tools and equipment.

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MJE350 Overview

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Part Image MJE350 SPC Multicomp

Power Bipolar Transistor, 0.5A I(C), 300V V(BR)CEO, 1-Element, PNP, Silicon, TO-126, Plastic/Epoxy, 3 Pin

Part Image MJE350 General Transistor Corp

Power Bipolar Transistor, 0.5A I(C), 1-Element, PNP

Part Image MJE350STU onsemi

Power Bipolar Transistor, 0.5A I(C), 300V V(BR)CEO, 1-Element, PNP, Silicon, TO-126, Plastic/Epoxy, 3 Pin

Part Image KSE350STU onsemi

Power Bipolar Transistor, 0.5A I(C), 300V V(BR)CEO, 1-Element, PNP, Silicon, TO-126, Plastic/Epoxy, 3 Pin

Part Image KSE350S Fairchild Semiconductor Corporation

Power Bipolar Transistor, 0.5A I(C), 300V V(BR)CEO, 1-Element, PNP, Silicon, TO-126, Plastic/Epoxy, 3 Pin

For a full list of alternate parts for MJE350, check out Findchips.com