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MJF45H11 - onsemi

Description: PNP Bipolar Power Transistor 10 AMPERES 80 VOLTS, 36 WATTS

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MJF45H11 Details

  • Manufacturer Part Number:

    MJF45H11

  • Brand Name:

    onsemi

  • Pbfree Code:

    No

  • Part Life Cycle Code:

    Obsolete

  • Part Package Code:

    TO-220 3 LEAD FULLPAK

  • Pin Count:

    3

  • Manufacturer Package Code:

    221D-03

  • ECCN Code:

    EAR99

  • HTS Code:

    8541.29.00.75

  • Factory Lead Time:

    4 Weeks

  • Manufacturer:

    onsemi

  • YTEOL:

    0

  • Case Connection:

    ISOLATED

  • Collector Current-Max (IC):

    10 A

  • Collector-Emitter Voltage-Max:

    80 V

  • Configuration:

    SINGLE

  • DC Current Gain-Min (hFE):

    40

  • JEDEC-95 Code:

    TO-220AB

  • JESD-30 Code:

    R-PSFM-T3

  • JESD-609 Code:

    e0

  • Number of Elements:

    1

  • Number of Terminals:

    3

  • Operating Temperature-Max:

    150 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    FLANGE MOUNT

  • Peak Reflow Temperature (Cel):

    235

  • Polarity/Channel Type:

    PNP

  • Power Dissipation Ambient-Max:

    2 W

  • Power Dissipation-Max (Abs):

    35 W

  • Qualification Status:

    Not Qualified

  • Surface Mount:

    NO

  • Terminal Finish:

    TIN LEAD

  • Terminal Form:

    THROUGH-HOLE

  • Terminal Position:

    SINGLE

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

  • Transition Frequency-Nom (fT):

    40 MHz

MJF45H11 Frequently Asked Questions (FAQs)

  • The recommended PCB footprint for the MJF45H11 is a standard TO-220 package with a minimum pad size of 5.5mm x 3.5mm and a thermal pad size of 2.5mm x 2.5mm.
  • To ensure reliable operation in high-temperature environments, it's essential to provide adequate heat sinking, such as a heat sink with a thermal resistance of ≤ 1°C/W, and to operate the transistor within its recommended temperature range of -55°C to 150°C.
  • The maximum safe operating area (SOA) for the MJF45H11 is not explicitly stated in the datasheet. However, it's recommended to operate the transistor within the boundaries of the output characteristics curves provided in the datasheet to ensure safe operation.
  • Yes, the MJF45H11 can be used in switching applications, but it's essential to ensure that the transistor is operated within its recommended switching frequency range and that the switching times are minimized to prevent excessive power dissipation.
  • To protect the MJF45H11 from electrostatic discharge (ESD), it's recommended to handle the device with anti-static precautions, such as using an anti-static wrist strap or mat, and to ensure that the PCB design includes ESD protection components, such as TVS diodes or ESD protection arrays.

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MJF45H11 Overview

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Part Image MJF45H11G onsemi

Power Bipolar Transistor, 10A I(C), 80V V(BR)CEO, 1-Element, PNP, Silicon, TO-220AB, Plastic/Epoxy, 3 Pin