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MJF45H11G - onsemi

Description: Low Collector-Emitter Saturation Voltage--VCE(sat) = 1.0 V (Max) @ 8.0 A; Fast Switching Speeds; Complementary Pairs Simplifies Designs; Pb-Free Packages are Available

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MJF45H11G - onsemi PCB footprint - Transistor Outline, Vertical - Transistor Outline, Vertical - TO-220 FULLPAK CASE 221D-03
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MJF45H11G - onsemi  - 3D model - Transistor Outline, Vertical - TO-220 FULLPAK CASE 221D-03
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MJF45H11G Details

  • Manufacturer Part Number:

    MJF45H11G

  • Brand Name:

    onsemi

  • Pbfree Code:

    Yes

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Part Package Code:

    TO-220 3 LEAD FULLPAK

  • Pin Count:

    3

  • Manufacturer Package Code:

    221D-03

  • Country Of Origin:

    South Korea

  • ECCN Code:

    EAR99

  • HTS Code:

    8541.29.00.75

  • Factory Lead Time:

    10 Weeks

  • Manufacturer:

    onsemi

  • YTEOL:

    4

  • Case Connection:

    ISOLATED

  • Collector Current-Max (IC):

    10 A

  • Collector-Emitter Voltage-Max:

    80 V

  • Configuration:

    SINGLE

  • DC Current Gain-Min (hFE):

    40

  • JEDEC-95 Code:

    TO-220AB

  • JESD-30 Code:

    R-PSFM-T3

  • JESD-609 Code:

    e3

  • Number of Elements:

    1

  • Number of Terminals:

    3

  • Operating Temperature-Max:

    150 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    FLANGE MOUNT

  • Polarity/Channel Type:

    PNP

  • Power Dissipation Ambient-Max:

    2 W

  • Power Dissipation-Max (Abs):

    35 W

  • Qualification Status:

    Not Qualified

  • Surface Mount:

    NO

  • Terminal Finish:

    Matte Tin (Sn) - annealed

  • Terminal Form:

    THROUGH-HOLE

  • Terminal Position:

    SINGLE

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

  • Transition Frequency-Nom (fT):

    40 MHz

MJF45H11G Frequently Asked Questions (FAQs)

  • The SOA for the MJF45H11G is not explicitly stated in the datasheet, but it can be estimated based on the device's thermal and electrical characteristics. A safe operating area can be determined by considering the device's voltage, current, and power ratings, as well as its thermal resistance and maximum junction temperature.
  • To ensure linear operation, the MJF45H11G should be biased in the active region, where the base-emitter voltage (Vbe) is around 0.7V and the collector-emitter voltage (Vce) is greater than 1V. The base current should be limited to prevent saturation, and the collector current should be within the recommended range.
  • A good PCB layout for the MJF45H11G should minimize thermal resistance and ensure good heat dissipation. This can be achieved by using a thermal pad, placing the device near a heat sink or metal core PCB, and using thermal vias to dissipate heat. A copper pour or thermal plane can also be used to spread heat.
  • Yes, the MJF45H11G can be used as a switch, but it's essential to consider the device's switching characteristics, such as the turn-on and turn-off times, and the voltage and current ratings. The device should be driven with a suitable base current to ensure fast switching, and the collector-emitter voltage should be limited to prevent excessive voltage stress.
  • To protect the MJF45H11G from ESD, it's essential to handle the device with anti-static precautions, such as using an anti-static wrist strap or mat. The device should also be stored in an anti-static bag or tube, and PCBs should be designed with ESD protection in mind, such as using ESD diodes or resistors.

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MJF45H11G Overview

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