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MMBT2484LT3G - onsemi

Description: Low rDS(on) Provides Higher Efficiency and Extends Battery Life; Miniature SOT-23 Surface Mount Package Saves Board Space; Pb-Free Package is Available

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PCB Footprints
MMBT2484LT3G - onsemi PCB footprint - SOT23 (3-Pin) - SOT23 (3-Pin) - SOT-23 (TO-236) CASE 318-08 ISSUE AS
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3D Models
MMBT2484LT3G - onsemi  - 3D model - SOT23 (3-Pin) - SOT-23 (TO-236) CASE 318-08 ISSUE AS
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MMBT2484LT3G Details

  • Manufacturer Part Number:

    MMBT2484LT3G

  • Brand Name:

    onsemi

  • Pbfree Code:

    Yes

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Part Package Code:

    SOT-23 (TO-236) 3 LEAD

  • Package Description:

    PLASTIC, CASE 318-08, 3 PIN

  • Pin Count:

    3

  • Manufacturer Package Code:

    318

  • Country Of Origin:

    Mainland China

  • ECCN Code:

    EAR99

  • Manufacturer:

    onsemi

  • YTEOL:

    7

  • Collector Current-Max (IC):

    0.05 A

  • Collector-Emitter Voltage-Max:

    60 V

  • Configuration:

    SINGLE

  • DC Current Gain-Min (hFE):

    250

  • JEDEC-95 Code:

    TO-236AB

  • JESD-30 Code:

    R-PDSO-G3

  • JESD-609 Code:

    e3

  • Moisture Sensitivity Level:

    1

  • Number of Elements:

    1

  • Number of Terminals:

    3

  • Operating Temperature-Max:

    150 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE

  • Peak Reflow Temperature (Cel):

    260

  • Polarity/Channel Type:

    NPN

  • Power Dissipation-Max (Abs):

    0.225 W

  • Qualification Status:

    Not Qualified

  • Surface Mount:

    YES

  • Terminal Finish:

    Matte Tin (Sn) - annealed

  • Terminal Form:

    GULL WING

  • Terminal Position:

    DUAL

  • Time@Peak Reflow Temperature-Max (s):

    30

  • Transistor Element Material:

    SILICON

MMBT2484LT3G Frequently Asked Questions (FAQs)

  • The recommended PCB layout for optimal thermal performance involves placing a thermal pad under the device, using a minimum of 2 oz copper thickness, and ensuring good thermal conduction to the surrounding copper area. A thermal via array can also be used to improve heat dissipation.
  • To ensure reliable operation at high temperatures, it's essential to follow the recommended operating conditions, including the maximum junction temperature (Tj) of 150°C. Additionally, consider using a heat sink, ensuring good airflow, and minimizing power dissipation.
  • The MMBT2484LT3G has built-in ESD protection, but it's still important to follow proper ESD handling procedures during assembly and testing. Use an ESD wrist strap or mat, and ensure that the device is handled in a static-safe environment.
  • Yes, the MMBT2484LT3G can be used in switching regulator applications, but it's essential to ensure that the device is operated within its safe operating area (SOA) and that the switching frequency is within the recommended range.
  • When paralleling multiple MMBT2484LT3G devices, ensure that each device has its own current sense resistor and that the devices are matched for optimal performance. Additionally, consider the overall thermal management and ensure that the devices are properly synchronized.

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MMBT2484LT3G Overview

Use the download button to access the MMBT2484LT3G schematic symbol, PCB footprint, and 3D model.
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MMBT2484LT3G Alternates

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Part Image MMBT2484LT1G onsemi

Small Signal Bipolar Transistor, 0.1A I(C), 60V V(BR)CEO, 1-Element, NPN, Silicon, TO-236AB

Part Image MMBT2484 onsemi

Small Signal Bipolar Transistor, 0.1A I(C), 60V V(BR)CEO, 1-Element, NPN, Silicon

Part Image MMBT2484L99Z Fairchild Semiconductor Corporation

Small Signal Bipolar Transistor, 0.1A I(C), 60V V(BR)CEO, 1-Element, NPN, Silicon

Part Image MMBT2484LT3 onsemi

Small Signal Bipolar Transistor, 0.05A I(C), 60V V(BR)CEO, 1-Element, NPN, Silicon, TO-236AB

Part Image MMBT2484 Freescale Semiconductor

TRANSISTOR,BJT,NPN,60V V(BR)CEO,50MA I(C),SOT-23

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