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MMBT5401-G - Comchip Technology

Description: RF Bipolar Transistors VCEO=-150V IC=-600mA

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MMBT5401-G - Comchip Technology - PCB symbol
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PCB Footprints
MMBT5401-G - Comchip Technology PCB footprint - SOT23 (3-Pin) - SOT23 (3-Pin) - SOT-23-2
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3D Models
MMBT5401-G - Comchip Technology - 3D model - SOT23 (3-Pin) - SOT-23-2
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MMBT5401-G Details

  • Manufacturer Part Number:

    MMBT5401-G

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Not Recommended

  • Country Of Origin:

    Taiwan

  • ECCN Code:

    EAR99

  • Manufacturer:

    Comchip Technology Corporation Ltd

  • YTEOL:

    3

  • Collector Current-Max (IC):

    0.6 A

  • Collector-Emitter Voltage-Max:

    150 V

  • Configuration:

    SINGLE

  • DC Current Gain-Min (hFE):

    50

  • JESD-30 Code:

    R-PDSO-G3

  • Number of Elements:

    1

  • Number of Terminals:

    3

  • Operating Temperature-Max:

    150 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE

  • Peak Reflow Temperature (Cel):

    260

  • Polarity/Channel Type:

    PNP

  • Power Dissipation-Max (Abs):

    0.3 W

  • Surface Mount:

    YES

  • Terminal Form:

    GULL WING

  • Terminal Position:

    DUAL

  • Time@Peak Reflow Temperature-Max (s):

    10

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

  • Transition Frequency-Nom (fT):

    100 MHz

MMBT5401-G Frequently Asked Questions (FAQs)

  • The recommended operating temperature range for the MMBT5401-G is -55°C to 150°C.
  • To ensure reliability, it's essential to follow proper derating guidelines, use a suitable heat sink, and ensure good thermal conductivity between the transistor and the heat sink.
  • The maximum allowable power dissipation for the MMBT5401-G is 625 mW at a case temperature of 25°C.
  • Yes, the MMBT5401-G can be used as a switch in high-frequency applications, but it's essential to consider the transistor's transition frequency (ft) and ensure that the operating frequency is within the recommended range.
  • To prevent thermal runaway, ensure that the transistor is properly heat-sinked, and the circuit is designed to prevent excessive current and voltage stress on the transistor.

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MMBT5401-G Overview

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