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MMBT5550LT1G - onsemi

Description: Miniature SOT-23 Surface Mount Package Saves Board Space; S Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable

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MMBT5550LT1G Details

  • Manufacturer Part Number:

    MMBT5550LT1G

  • Brand Name:

    onsemi

  • Pbfree Code:

    Yes

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Part Package Code:

    SOT-23 (TO-236) 3 LEAD

  • Pin Count:

    3

  • Manufacturer Package Code:

    318

  • Country Of Origin:

    Mainland China

  • ECCN Code:

    EAR99

  • Date Of Intro:

    1999-01-01

  • Manufacturer:

    onsemi

  • YTEOL:

    7

  • Collector Current-Max (IC):

    0.6 A

  • Collector-Emitter Voltage-Max:

    140 V

  • Configuration:

    SINGLE

  • DC Current Gain-Min (hFE):

    20

  • JEDEC-95 Code:

    TO-236AB

  • JESD-30 Code:

    R-PDSO-G3

  • JESD-609 Code:

    e3

  • Moisture Sensitivity Level:

    1

  • Number of Elements:

    1

  • Number of Terminals:

    3

  • Operating Temperature-Max:

    150 °C

  • Operating Temperature-Min:

    -55 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE

  • Packing Method:

    TR

  • Peak Reflow Temperature (Cel):

    260

  • Polarity/Channel Type:

    NPN

  • Power Dissipation-Max (Abs):

    0.3 W

  • Qualification Status:

    Not Qualified

  • Surface Mount:

    YES

  • Terminal Finish:

    Matte Tin (Sn) - annealed

  • Terminal Form:

    GULL WING

  • Terminal Position:

    DUAL

  • Time@Peak Reflow Temperature-Max (s):

    30

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

  • Transition Frequency-Nom (fT):

    200 MHz

  • VCEsat-Max:

    0.25 V

MMBT5550LT1G Frequently Asked Questions (FAQs)

  • The maximum operating temperature range for the MMBT5550LT1G is -55°C to 150°C.
  • To ensure reliability, it's essential to follow proper thermal management practices, such as providing adequate heat sinking, minimizing power dissipation, and avoiding thermal runaway conditions.
  • The recommended storage temperature range for the MMBT5550LT1G is -55°C to 150°C, with a relative humidity of 60% or less.
  • Yes, the MMBT5550LT1G can be used in switching applications, but it's essential to consider the transistor's switching characteristics, such as rise and fall times, and ensure that the application is within the device's safe operating area.
  • To prevent electrostatic discharge (ESD) damage, handle the MMBT5550LT1G with ESD-protective equipment, such as wrist straps and mats, and follow proper handling and storage procedures.

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MMBT5550LT1G Overview

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