Part Image

MMBT5551 - Diotec

Description: Bipolar (BJT) Transistor NPN 160 V 600 mA 300MHz 250 mW Surface Mount SOT-23-3 (TO-236) , 300 MHz , -55°C ~ 150°C (TJ)

Download MMBT5551 Model
Schematic
symbols
Schematic symbol is unavailable for download
PCB
footprints
PCB footprint is unavailable for download
3D
models
3D model is unavailable for download
PCB Footprints
MMBT5551 - Diotec PCB footprint - Other - Other - TO-236_2026
click to zoom
3D Models
MMBT5551 - Diotec  - 3D model - Other - TO-236_2026
click to zoom

MMBT5551 Details

  • Manufacturer Part Number:

    MMBT5551

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Part Package Code:

    SOT-23

  • Package Description:

    ROHS COMPLIANT, PLASTIC PACKAGE-3

  • Pin Count:

    3

  • Country Of Origin:

    Mainland China

  • ECCN Code:

    EAR99

  • Manufacturer:

    Diotec Semiconductor AG

  • YTEOL:

    7

  • Collector Current-Max (IC):

    0.6 A

  • Collector-Emitter Voltage-Max:

    160 V

  • Configuration:

    SINGLE

  • DC Current Gain-Min (hFE):

    30

  • JEDEC-95 Code:

    TO-236

  • JESD-30 Code:

    R-PDSO-G3

  • JESD-609 Code:

    e3

  • Number of Elements:

    1

  • Number of Terminals:

    3

  • Operating Temperature-Max:

    150 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE

  • Peak Reflow Temperature (Cel):

    260

  • Polarity/Channel Type:

    NPN

  • Power Dissipation-Max (Abs):

    0.225 W

  • Qualification Status:

    Not Qualified

  • Surface Mount:

    YES

  • Terminal Finish:

    Matte Tin (Sn) - annealed

  • Terminal Form:

    GULL WING

  • Terminal Position:

    DUAL

  • Time@Peak Reflow Temperature-Max (s):

    30

  • Transistor Element Material:

    SILICON

  • Transition Frequency-Nom (fT):

    100 MHz

MMBT5551 Frequently Asked Questions (FAQs)

  • The MMBT5551 can operate safely between -55°C to 150°C, but the recommended operating temperature range is -40°C to 125°C.
  • To ensure proper biasing, the base-emitter voltage (VBE) should be around 0.7V, and the collector-emitter voltage (VCE) should be around 1V to 2V. The base current should be limited to prevent overheating.
  • The MMBT5551 can handle a maximum continuous collector current (IC) of 500mA, and a peak current of up to 1A for short durations.
  • To protect the MMBT5551 from ESD, handle the device by the body, use an anti-static wrist strap or mat, and store the device in an anti-static bag or container.
  • Yes, the MMBT5551 can be used as a switch, but it's not recommended due to its relatively low current handling capacity and moderate switching speed. A dedicated switching transistor like the 2N3904 or 2N2222 might be a better choice.

Trust Checks

This model has been provided by community users.
Community Provided
This model has been verified by system checks.
System Verified
This model has been reviewed by community users.
Community Approved
Sponsored

MMBT5551 Overview

Use the download button to access the MMBT5551 schematic symbol, PCB footprint, and 3D model.
To find more CAD model downloads similar to this part, try a partial part number search, like MMBT5, or try a keyword search, such as Small Signal Bipolar Transistors

Parts related to MMBT5551

Showing 0 results

MMBT5551 Alternates

Showing results

Image Part Number Model
Part Image CMPT5551TR13PBFREE Central Semiconductor Corp

Small Signal Bipolar Transistor, 1-Element, NPN

Part Image MMBT5551 Texas Instruments

200mA, 160V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-236AB

Part Image MMBT5551 National Semiconductor Corporation

Small Signal Bipolar Transistor, 0.2A I(C), 160V V(BR)CEO, 1-Element, NPN, Silicon, TO-236AB

Part Image PMBT5551TRL YAGEO Corporation

Small Signal Bipolar Transistor, 0.6A I(C), 160V V(BR)CEO, 1-Element, NPN, Silicon

Part Image PMBT5551-TAPE-13 NXP Semiconductors

Small Signal Bipolar Transistor, 0.6A I(C), 160V V(BR)CEO, 1-Element, NPN, Silicon

For a full list of alternate parts for MMBT5551, check out Findchips.com