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MMBT5551 - TAITRON COMPONENTS

Description: Trans GP BJT NPN 160V 0.6A 3-Pin SOT-23 T/R

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Symbol
MMBT5551 - TAITRON COMPONENTS - PCB symbol
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PCB Footprints
MMBT5551 - TAITRON COMPONENTS PCB footprint - SOT23 (3-Pin) - SOT23 (3-Pin) - SOT-23_2025
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3D Models
MMBT5551 - TAITRON COMPONENTS - 3D model - SOT23 (3-Pin) - SOT-23_2025
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MMBT5551 Details

  • Manufacturer Part Number:

    MMBT5551

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • ECCN Code:

    EAR99

  • Manufacturer:

    Taitron Components Inc

  • YTEOL:

    7

  • Collector Current-Max (IC):

    0.6 A

  • Collector-Emitter Voltage-Max:

    160 V

  • Configuration:

    SINGLE

  • DC Current Gain-Min (hFE):

    30

  • JESD-30 Code:

    R-PDSO-G3

  • Number of Elements:

    1

  • Number of Terminals:

    3

  • Operating Temperature-Max:

    150 °C

  • Operating Temperature-Min:

    -55 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE

  • Peak Reflow Temperature (Cel):

    NOT SPECIFIED

  • Polarity/Channel Type:

    NPN

  • Surface Mount:

    YES

  • Terminal Form:

    GULL WING

  • Terminal Position:

    DUAL

  • Time@Peak Reflow Temperature-Max (s):

    NOT SPECIFIED

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

MMBT5551 Frequently Asked Questions (FAQs)

  • The recommended PCB footprint for the MMBT5551 is a standard SOT-23 package with a 1.3mm x 0.8mm pad size and a 0.5mm lead pitch.
  • The MMBT5551 is rated for operation up to 150°C, but it's recommended to derate the power dissipation at higher temperatures to ensure reliability. Consult the datasheet for thermal derating information.
  • To ensure the MMBT5551 is properly biased for saturation, ensure the base-emitter voltage (Vbe) is at least 0.7V and the collector-emitter voltage (Vce) is less than the specified maximum rating. Consult the datasheet for recommended operating conditions.
  • The MMBT5551 is rated for a maximum collector current (Ic) of 500mA and a maximum peak current (Icp) of 1A. However, it's recommended to derate the current handling capability based on the operating temperature and other application-specific factors.
  • The MMBT5551 is a general-purpose transistor and is not optimized for high-frequency applications. It has a transition frequency (fT) of around 100MHz, which may not be suitable for high-frequency switching applications. Consult the datasheet for more information on frequency response.

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MMBT5551 Overview

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