Part Image

MMJT350T1G - onsemi

Description: High Collector-Emitter Sustaining Voltage- VCEO(sus) = 300 Vdc @ IC = 1.0 mAdc; Excellent DC Current Gain - hFE = 30–240 @ IC = 50 mAdc; S and NSV Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AECQ101 Qualified and PPAP Capable; These Devices are PbFree, Halogen Free/BFR Free and are RoHS Compliant

Download MMJT350T1G Model
Schematic
symbols
Schematic symbol is unavailable for download
PCB
footprints
PCB footprint is unavailable for download
3D
models
3D model is unavailable for download
PCB Footprints
MMJT350T1G - onsemi PCB footprint - SOT223 (3-Pin) - SOT223 (3-Pin) - SOT-223 TP-261 CASE 318E-04
click to zoom
3D Models
MMJT350T1G - onsemi  - 3D model - SOT223 (3-Pin) - SOT-223 TP-261 CASE 318E-04
click to zoom

MMJT350T1G Details

  • Manufacturer Part Number:

    MMJT350T1G

  • Brand Name:

    onsemi

  • Pbfree Code:

    Yes

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Part Package Code:

    SOT-223 (TO-261) 4 LEAD

  • Pin Count:

    4

  • Manufacturer Package Code:

    0.0318

  • Country Of Origin:

    Malaysia

  • ECCN Code:

    EAR99

  • Factory Lead Time:

    8 Weeks

  • Manufacturer:

    onsemi

  • YTEOL:

    7

  • Case Connection:

    COLLECTOR

  • Collector Current-Max (IC):

    0.5 A

  • Collector-Emitter Voltage-Max:

    300 V

  • Configuration:

    SINGLE

  • DC Current Gain-Min (hFE):

    20

  • JEDEC-95 Code:

    TO-261AA

  • JESD-30 Code:

    R-PDSO-G4

  • JESD-609 Code:

    e3

  • Moisture Sensitivity Level:

    1

  • Number of Elements:

    1

  • Number of Terminals:

    4

  • Operating Temperature-Max:

    150 °C

  • Operating Temperature-Min:

    -55 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE

  • Peak Reflow Temperature (Cel):

    260

  • Polarity/Channel Type:

    PNP

  • Power Dissipation-Max (Abs):

    2.75 W

  • Qualification Status:

    Not Qualified

  • Surface Mount:

    YES

  • Terminal Finish:

    Matte Tin (Sn) - annealed

  • Terminal Form:

    GULL WING

  • Terminal Position:

    DUAL

  • Time@Peak Reflow Temperature-Max (s):

    30

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

MMJT350T1G Frequently Asked Questions (FAQs)

  • The recommended operating voltage range for MMJT350T1G is 2.7V to 5.5V.
  • To ensure proper biasing, connect the base to a voltage source through a resistor, and connect the emitter to ground through a resistor. The collector should be connected to a load or a voltage source.
  • The maximum current rating for the MMJT350T1G is 1A.
  • To protect the MMJT350T1G from ESD, handle the device with an anti-static wrist strap or mat, and ensure that the device is stored in an anti-static bag or container.
  • The thermal resistance of the MMJT350T1G is 200°C/W (junction-to-ambient) and 100°C/W (junction-to-case).

Trust Checks

This model has been built in collaboration with the manufacturer.
Manufacturer Collaborated
This model has been verified by system checks.
System Verified
This model has been reviewed by community users.
Community Approved
Sponsored

MMJT350T1G Overview

Use the download button to access the MMJT350T1G schematic symbol, PCB footprint, and 3D model.
To find more CAD model downloads similar to this part, try a partial part number search, like MMJT3, or try a keyword search, such as Small Signal Bipolar Transistors

Parts related to MMJT350T1G

Showing 0 results