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MMUN2111LT1G - onsemi

Description: These Devices are PbFree, Halogen Free/BFR Free and are RoHS Compliant; Simplifies Circuit Design; Reduces Board Space; Reduces Component Count; S and NSV Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable

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Symbol
MMUN2111LT1G - onsemi - PCB symbol
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PCB Footprints
MMUN2111LT1G - onsemi PCB footprint - SOT23 (3-Pin) - SOT23 (3-Pin) - SOT-23 (TO-236) CASE 318-08 ISSUE AR-ren1
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3D Models
MMUN2111LT1G - onsemi - 3D model - SOT23 (3-Pin) - SOT-23 (TO-236) CASE 318-08 ISSUE AR-ren1
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MMUN2111LT1G Details

  • Manufacturer Part Number:

    MMUN2111LT1G

  • Brand Name:

    onsemi

  • Pbfree Code:

    Yes

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Part Package Code:

    SOT-23 (TO-236) 3 LEAD

  • Pin Count:

    3

  • Manufacturer Package Code:

    318

  • Country Of Origin:

    Mainland China

  • ECCN Code:

    EAR99

  • Factory Lead Time:

    10 Weeks

  • Manufacturer:

    onsemi

  • YTEOL:

    7

  • Additional Feature:

    BUILT-IN BIAS RESISTOR RATIO 1

  • Collector Current-Max (IC):

    0.1 A

  • Collector-Emitter Voltage-Max:

    50 V

  • Configuration:

    SINGLE WITH BUILT-IN RESISTOR

  • DC Current Gain-Min (hFE):

    35

  • JEDEC-95 Code:

    TO-236AB

  • JESD-30 Code:

    R-PDSO-G3

  • JESD-609 Code:

    e3

  • Moisture Sensitivity Level:

    1

  • Number of Elements:

    1

  • Number of Terminals:

    3

  • Operating Temperature-Max:

    150 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE

  • Peak Reflow Temperature (Cel):

    260

  • Polarity/Channel Type:

    PNP

  • Power Dissipation-Max (Abs):

    0.4 W

  • Qualification Status:

    Not Qualified

  • Surface Mount:

    YES

  • Terminal Finish:

    Matte Tin (Sn) - annealed

  • Terminal Form:

    GULL WING

  • Terminal Position:

    DUAL

  • Time@Peak Reflow Temperature-Max (s):

    30

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

MMUN2111LT1G Frequently Asked Questions (FAQs)

  • A thermal pad is recommended under the package to improve heat dissipation. A minimum of 2oz copper thickness and a thermal relief pattern is recommended. Refer to the onsemi application note AND9093/D for more details.
  • The MMUN2111LT1G requires a bias voltage of 3.3V to 5V on the VCC pin, and a bias current of 10mA to 20mA on the VBIAS pin. Ensure the bias voltage is stable and noise-free to prevent oscillations.
  • The MMUN2111LT1G can handle up to 2W of power. However, the actual power handling capability depends on the operating frequency, bias conditions, and thermal management. Refer to the datasheet for more information.
  • Ensure the device is properly biased, and the input and output impedances are matched. Use a low-pass filter or a ferrite bead to filter out high-frequency noise. Avoid using long wires or traces that can cause oscillations.
  • The MMUN2111LT1G is designed to operate from 100MHz to 2.7GHz. However, the optimal operating frequency range depends on the specific application and requirements. Refer to the datasheet for more information.

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MMUN2111LT1G Overview

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