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MMUN2211LT3G - onsemi

Description: Pre-Biased Bipolar Transistor (BJT) NPN - Pre-Biased 50 V 100 mA 246 mW Surface Mount SOT-23-3 (TO-236)

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PCB Footprints
MMUN2211LT3G - onsemi PCB footprint - SOT23 (3-Pin) - SOT23 (3-Pin) - SOT−23 (TO−236) 2.90x1.30x1.00 1.90P CASE 318 ISSUE AU_2026
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3D Models
MMUN2211LT3G - onsemi  - 3D model - SOT23 (3-Pin) - SOT−23 (TO−236) 2.90x1.30x1.00 1.90P CASE 318 ISSUE AU_2026
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MMUN2211LT3G Details

  • Manufacturer Part Number:

    MMUN2211LT3G

  • Brand Name:

    onsemi

  • Pbfree Code:

    Yes

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Part Package Code:

    SOT-23 (TO-236) 3 LEAD

  • Package Description:

    HALOGEN FREE AND ROHS COMPLIANT, CASE 318-08, 3 PIN

  • Pin Count:

    3

  • Manufacturer Package Code:

    318

  • Country Of Origin:

    Mainland China

  • ECCN Code:

    EAR99

  • Manufacturer:

    onsemi

  • YTEOL:

    7

  • Additional Feature:

    BUILT-IN BIAS RESISTOR RATIO IS 1

  • Collector Current-Max (IC):

    0.1 A

  • Collector-Emitter Voltage-Max:

    50 V

  • Configuration:

    SINGLE WITH BUILT-IN RESISTOR

  • DC Current Gain-Min (hFE):

    35

  • JEDEC-95 Code:

    TO-236

  • JESD-30 Code:

    R-PDSO-G3

  • JESD-609 Code:

    e3

  • Moisture Sensitivity Level:

    1

  • Number of Elements:

    1

  • Number of Terminals:

    3

  • Operating Temperature-Max:

    150 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE

  • Peak Reflow Temperature (Cel):

    260

  • Polarity/Channel Type:

    NPN

  • Power Dissipation-Max (Abs):

    0.2 W

  • Qualification Status:

    Not Qualified

  • Surface Mount:

    YES

  • Terminal Finish:

    Matte Tin (Sn) - annealed

  • Terminal Form:

    GULL WING

  • Terminal Position:

    DUAL

  • Time@Peak Reflow Temperature-Max (s):

    30

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

MMUN2211LT3G Frequently Asked Questions (FAQs)

  • A 2-layer or 4-layer PCB with a solid ground plane and thermal vias under the device can help to dissipate heat efficiently. The datasheet provides a recommended land pattern, but a more detailed layout guide can be found in the onsemi application note AND8325/D.
  • To ensure reliable operation at high temperatures, it's essential to follow the recommended derating curves for voltage and current. Additionally, consider using a heat sink or thermal interface material to reduce the junction temperature. The device is rated for operation up to 150°C, but the maximum junction temperature should be limited to 125°C for optimal reliability.
  • The MMUN2211LT3G has built-in ESD protection diodes, but it's still important to follow proper ESD handling procedures during assembly and testing. For latch-up prevention, ensure that the device is not exposed to excessive voltage or current transients, and consider adding external protection devices such as TVS diodes or varistors if necessary.
  • Yes, the MMUN2211LT3G is qualified for automotive and high-reliability applications. It meets the requirements of AEC-Q101 and is manufactured using a process that is compliant with IATF 16949. However, it's essential to consult with onsemi's quality and reliability team to ensure that the device meets the specific requirements of your application.
  • For troubleshooting and debugging, use a combination of visual inspection, voltage and current measurements, and oscilloscope analysis. Consult the onsemi application note AND8325/D for guidance on debugging common issues such as overheating, voltage drops, and oscillations.

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MMUN2211LT3G Overview

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