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MPSA70RLRM - onsemi

Description: Bipolar (BJT) Transistor PNP 40 V 100 mA 125MHz 625 mW Through Hole TO-92 (TO-226)

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MPSA70RLRM Details

  • Manufacturer Part Number:

    MPSA70RLRM

  • Brand Name:

    onsemi

  • Pbfree Code:

    No

  • Part Life Cycle Code:

    Obsolete

  • Part Package Code:

    TO-92 (TO-226) 5.33mm Body Height

  • Package Description:

    PLASTIC, TO-226AA, 3 PIN

  • Pin Count:

    3

  • Manufacturer Package Code:

    29-11

  • ECCN Code:

    EAR99

  • Factory Lead Time:

    4 Weeks

  • Manufacturer:

    onsemi

  • YTEOL:

    0

  • Collector Current-Max (IC):

    0.1 A

  • Collector-Emitter Voltage-Max:

    40 V

  • Configuration:

    SINGLE

  • DC Current Gain-Min (hFE):

    40

  • JEDEC-95 Code:

    TO-92

  • JESD-30 Code:

    O-PBCY-T3

  • JESD-609 Code:

    e0

  • Number of Elements:

    1

  • Number of Terminals:

    3

  • Operating Temperature-Max:

    150 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    ROUND

  • Package Style:

    CYLINDRICAL

  • Peak Reflow Temperature (Cel):

    235

  • Polarity/Channel Type:

    PNP

  • Power Dissipation-Max (Abs):

    0.625 W

  • Qualification Status:

    Not Qualified

  • Surface Mount:

    NO

  • Terminal Finish:

    Tin/Lead (Sn/Pb)

  • Terminal Form:

    THROUGH-HOLE

  • Terminal Position:

    BOTTOM

  • Transistor Application:

    AMPLIFIER

  • Transistor Element Material:

    SILICON

  • Transition Frequency-Nom (fT):

    125 MHz

MPSA70RLRM Frequently Asked Questions (FAQs)

  • The maximum safe operating area (SOA) for the MPSA70RLRM is not explicitly stated in the datasheet, but it can be estimated based on the device's thermal and electrical characteristics. A safe operating area can be determined by considering the device's maximum junction temperature, voltage, and current ratings.
  • To ensure the MPSA70RLRM is properly biased for linear operation, the base-emitter voltage (VBE) should be set to around 0.65-0.7V, and the collector-emitter voltage (VCE) should be set to a value that allows the transistor to operate in the active region. The exact biasing conditions may vary depending on the specific application and circuit design.
  • The recommended PCB layout for the MPSA70RLRM involves keeping the leads as short as possible, using a solid ground plane, and minimizing thermal resistance. Thermal management is critical, and a heat sink or thermal pad may be necessary to ensure the device operates within its maximum junction temperature rating.
  • While the MPSA70RLRM is primarily designed for linear applications, it can be used in switching applications with proper design considerations. However, the device's switching characteristics, such as turn-on and turn-off times, may not be optimized for high-frequency switching applications.
  • ESD protection for the MPSA70RLRM can be achieved through the use of ESD protection diodes, resistors, and capacitors in the circuit design. Additionally, proper handling and storage procedures should be followed to prevent ESD damage during manufacturing and assembly.

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MPSA70RLRM Overview

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Part Image MPSA70 Continental Device India Ltd

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Part Image MPSA70 National Semiconductor Corporation

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For a full list of alternate parts for MPSA70RLRM, check out Findchips.com