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MSD602-RT1G - onsemi

Description: High hFE, 120-240; Low VCE(sat), < 0.6 V; Available in 8 mm, 7-inch/3000 Unit Tape and Reel; S Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable; These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS Compliant

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Symbol
MSD602-RT1G - onsemi - PCB symbol
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PCB Footprints
MSD602-RT1G - onsemi PCB footprint - SOT23 (3-Pin) - SOT23 (3-Pin) - SC-59 CASE 318D-04
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3D Models
MSD602-RT1G - onsemi - 3D model - SOT23 (3-Pin) - SC-59 CASE 318D-04
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MSD602-RT1G Details

  • Manufacturer Part Number:

    MSD602-RT1G

  • Brand Name:

    onsemi

  • Pbfree Code:

    Yes

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Part Package Code:

    SC-59 3 LEAD

  • Package Description:

    LEAD FREE, CASE 318D-04, SC-59, 3 PIN

  • Pin Count:

    3

  • Manufacturer Package Code:

    318

  • Country Of Origin:

    Mainland China

  • ECCN Code:

    EAR99

  • Factory Lead Time:

    8 Weeks

  • Manufacturer:

    onsemi

  • YTEOL:

    7

  • Collector Current-Max (IC):

    0.5 A

  • Collector-Emitter Voltage-Max:

    50 V

  • Configuration:

    SINGLE

  • DC Current Gain-Min (hFE):

    40

  • JESD-30 Code:

    R-PDSO-G3

  • JESD-609 Code:

    e3

  • Moisture Sensitivity Level:

    1

  • Number of Elements:

    1

  • Number of Terminals:

    3

  • Operating Temperature-Max:

    150 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE

  • Peak Reflow Temperature (Cel):

    260

  • Polarity/Channel Type:

    NPN

  • Power Dissipation-Max (Abs):

    0.2 W

  • Qualification Status:

    Not Qualified

  • Surface Mount:

    YES

  • Terminal Finish:

    Matte Tin (Sn) - annealed

  • Terminal Form:

    GULL WING

  • Terminal Position:

    DUAL

  • Time@Peak Reflow Temperature-Max (s):

    30

  • Transistor Application:

    AMPLIFIER

  • Transistor Element Material:

    SILICON

MSD602-RT1G Frequently Asked Questions (FAQs)

  • A 2-layer or 4-layer PCB with a solid ground plane and thermal vias is recommended. The device should be placed near a thermal pad or heat sink to dissipate heat efficiently.
  • Ensure proper heat sinking, use a thermal interface material, and follow the recommended PCB layout. Also, consider derating the device's power handling at high temperatures.
  • Handle the device by the body or pins, avoid touching the die, and use an ESD wrist strap or mat. The device has built-in ESD protection, but handling precautions are still necessary.
  • Yes, the MSD602-RT1G is suitable for switching power supply applications due to its high voltage and current ratings. However, ensure proper snubber design and layout to minimize ringing and EMI.
  • Choose a gate resistor value that balances switching speed and EMI. A value between 10 ohms and 100 ohms is typical. Consult the application note or onsemi's support resources for more information.

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MSD602-RT1G Overview

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