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MT40A1G16KD-062E:E - Micron

Description: DRAM, 1G X 16BIT, 0 TO 95DEG C VDD = VDDQ = 1.2V ά60mV VPP6 nM6 M6 On-die, internal, adjustable VREFDQ generation 1.2V pseudo open-drain I/O TC maximum up to 95ιC 64ms, 8192-cycle refresh up to 85ιC 32ms, 8192-cycle refresh at >85ιC to 95ιC 16 internal banks (x4, x8): 4 groups of 4 banks each 8 internal banks (x16): 2 groups of 4 banks each

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MT40A1G16KD-062E:E - Micron PCB footprint - BGA - BGA - 96-Ball FBGA -x16 (KD)
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MT40A1G16KD-062E:E Details

  • Manufacturer Part Number:

    MT40A1G16KD-062E:E

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Obsolete

  • Package Description:

    FBGA-96

  • ECCN Code:

    EAR99

  • HTS Code:

    8542.32.00.36

  • Manufacturer:

    Micron Technology Inc

  • YTEOL:

    0

  • Access Mode:

    MULTI BANK PAGE BURST

  • Additional Feature:

    AUTO/SELF REFRESH

  • Clock Frequency-Max (fCLK):

    1600 MHz

  • I/O Type:

    COMMON

  • Interleaved Burst Length:

    4,8

  • JESD-30 Code:

    R-PBGA-B96

  • JESD-609 Code:

    e1

  • Length:

    13 mm

  • Memory Density:

    17179869184 bit

  • Memory IC Type:

    DDR4 DRAM

  • Memory Width:

    16

  • Number of Functions:

    1

  • Number of Ports:

    1

  • Number of Terminals:

    96

  • Number of Words:

    1073741824 words

  • Number of Words Code:

    1000000000

  • Operating Mode:

    SYNCHRONOUS

  • Operating Temperature-Max:

    95 °C

  • Organization:

    1GX16

  • Output Characteristics:

    3-STATE

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Code:

    TFBGA

  • Package Equivalence Code:

    BGA96,9X16,32

  • Package Shape:

    RECTANGULAR

  • Package Style:

    GRID ARRAY, THIN PROFILE, FINE PITCH

  • Peak Reflow Temperature (Cel):

    260

  • Refresh Cycles:

    8192

  • Seated Height-Max:

    1.2 mm

  • Self Refresh:

    YES

  • Sequential Burst Length:

    4,8

  • Standby Current-Max:

    0.062 A

  • Standby Voltage-Min:

    1.14 V

  • Supply Current-Max:

    0.245 mA

  • Supply Voltage-Max (Vsup):

    1.26 V

  • Supply Voltage-Min (Vsup):

    1.14 V

  • Supply Voltage-Nom (Vsup):

    1.2 V

  • Surface Mount:

    YES

  • Technology:

    CMOS

  • Temperature Grade:

    OTHER

  • Terminal Finish:

    TIN SILVER COPPER

  • Terminal Form:

    BALL

  • Terminal Pitch:

    0.8 mm

  • Terminal Position:

    BOTTOM

  • Time@Peak Reflow Temperature-Max (s):

    30

  • Width:

    9 mm

MT40A1G16KD-062E:E Frequently Asked Questions (FAQs)

  • The maximum operating temperature range for this module is 0°C to 95°C, with a storage temperature range of -40°C to 100°C.
  • To ensure signal integrity, use a signal integrity analysis tool to simulate the signal behavior and optimize the PCB design. Additionally, use a clock signal with a high slew rate and a low jitter to minimize signal degradation.
  • The recommended voltage for the VDD and VDDQ power supplies is 1.2V ± 0.06V.
  • During self-refresh mode, the DRAM module will automatically refresh the memory cells. The host controller should not issue any refresh commands during this time.
  • The maximum current consumption of this module is 1.5A for VDD and 1.5A for VDDQ.

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MT40A1G16KD-062E:E Overview

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