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MT40A2G4WE-083E:B - Micron

Description: DRAM DDR4 8G 2GX4 FBGA

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PCB Footprints
MT40A2G4WE-083E:B - Micron PCB footprint - BGA - BGA - 78-Ball FBGA – x4, x8 "WE
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MT40A2G4WE-083E:B - Micron  - 3D model - BGA - 78-Ball FBGA – x4, x8 "WE
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MT40A2G4WE-083E:B Details

  • Manufacturer Part Number:

    MT40A2G4WE-083E:B

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Obsolete

  • Package Description:

    FBGA-78

  • ECCN Code:

    EAR99

  • HTS Code:

    8542.32.00.36

  • Date Of Intro:

    2016-03-18

  • Manufacturer:

    Micron Technology Inc

  • YTEOL:

    0

  • Access Mode:

    MULTI BANK PAGE BURST

  • Clock Frequency-Max (fCLK):

    1200 MHz

  • I/O Type:

    COMMON

  • Interleaved Burst Length:

    8

  • JESD-30 Code:

    R-PBGA-B78

  • Length:

    12 mm

  • Memory Density:

    8589934592 bit

  • Memory IC Type:

    DDR4 DRAM

  • Memory Width:

    4

  • Number of Functions:

    1

  • Number of Ports:

    1

  • Number of Terminals:

    78

  • Number of Words:

    2147483648 words

  • Number of Words Code:

    2000000000

  • Operating Mode:

    SYNCHRONOUS

  • Operating Temperature-Max:

    95 °C

  • Organization:

    2GX4

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Code:

    TFBGA

  • Package Equivalence Code:

    BGA96,9X13,32

  • Package Shape:

    RECTANGULAR

  • Package Style:

    GRID ARRAY, THIN PROFILE, FINE PITCH

  • Peak Reflow Temperature (Cel):

    NOT SPECIFIED

  • Refresh Cycles:

    8192

  • Seated Height-Max:

    1.2 mm

  • Self Refresh:

    YES

  • Sequential Burst Length:

    8

  • Standby Current-Max:

    0.038 A

  • Supply Current-Max:

    0.11 mA

  • Supply Voltage-Max (Vsup):

    1.26 V

  • Supply Voltage-Min (Vsup):

    1.14 V

  • Supply Voltage-Nom (Vsup):

    1.2 V

  • Surface Mount:

    YES

  • Technology:

    CMOS

  • Temperature Grade:

    OTHER

  • Terminal Form:

    BALL

  • Terminal Pitch:

    0.8 mm

  • Terminal Position:

    BOTTOM

  • Time@Peak Reflow Temperature-Max (s):

    NOT SPECIFIED

  • Width:

    8 mm

MT40A2G4WE-083E:B Frequently Asked Questions (FAQs)

  • The maximum operating temperature range for the MT40A2G4WE-083E:B is 0°C to 85°C, with a maximum storage temperature range of -40°C to 100°C.
  • To ensure signal integrity, it is recommended to follow the PCB design guidelines provided in the Micron DDR4 SDRAM module design guide, including using controlled impedance traces, minimizing signal routing distances, and using signal termination resistors as needed.
  • The recommended refresh rate for the MT40A2G4WE-083E:B is 4x per tREFI (Refresh Interval) = 3.9 μs, with a maximum refresh interval of 3.9 μs.
  • The MT40A2G4WE-083E:B is designed to operate at a voltage supply of 1.2V, with a tolerance of ±0.06V. Operating the module at a different voltage supply may affect its performance and reliability, and is not recommended.
  • The MT40A2G4WE-083E:B supports error detection and correction using ECC (Error-Correcting Code) and CRC (Cyclic Redundancy Check). The module also supports retry mechanisms to handle errors during data transfer. The specific error handling and retry mechanisms should be implemented in the system's memory controller and firmware.

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MT40A2G4WE-083E:B Overview

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