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MT41K256M16TW-107:P - Micron

Description: MICRON - MT41K256M16TW-107:P - SDRAM, 256M X 16BIT, 0 TO 95DEG C

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PCB Footprints
MT41K256M16TW-107:P - Micron PCB footprint - BGA - BGA - :P - SDRAM, 256M
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MT41K256M16TW-107:P - Micron  - 3D model - BGA - :P - SDRAM, 256M
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MT41K256M16TW-107:P Details

  • Manufacturer Part Number:

    MT41K256M16TW-107:P

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Package Description:

    FBGA-96

  • Country Of Origin:

    Mainland China, Taiwan

  • ECCN Code:

    EAR99

  • HTS Code:

    8542.32.00.36

  • Manufacturer:

    Micron Technology Inc

  • YTEOL:

    7

  • Access Mode:

    MULTI BANK PAGE BURST

  • Access Time-Max:

    0.195 ns

  • Clock Frequency-Max (fCLK):

    933 MHz

  • I/O Type:

    COMMON

  • Interleaved Burst Length:

    8

  • JESD-30 Code:

    R-PBGA-B96

  • Length:

    14 mm

  • Memory Density:

    4294967296 bit

  • Memory IC Type:

    DDR3L DRAM

  • Memory Width:

    16

  • Number of Functions:

    1

  • Number of Ports:

    1

  • Number of Terminals:

    96

  • Number of Words:

    268435456 words

  • Number of Words Code:

    256000000

  • Operating Mode:

    SYNCHRONOUS

  • Operating Temperature-Max:

    95 °C

  • Organization:

    256MX16

  • Output Characteristics:

    3-STATE

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Code:

    TFBGA

  • Package Equivalence Code:

    BGA96,9X16,32

  • Package Shape:

    RECTANGULAR

  • Package Style:

    GRID ARRAY, THIN PROFILE, FINE PITCH

  • Peak Reflow Temperature (Cel):

    260

  • Refresh Cycles:

    8192

  • Seated Height-Max:

    1.2 mm

  • Self Refresh:

    YES

  • Sequential Burst Length:

    8

  • Supply Voltage-Max (Vsup):

    1.45 V

  • Supply Voltage-Min (Vsup):

    1.283 V

  • Supply Voltage-Nom (Vsup):

    1.35 V

  • Surface Mount:

    YES

  • Technology:

    CMOS

  • Temperature Grade:

    OTHER

  • Terminal Finish:

    Tin/Silver/Copper (Sn96.8Ag3.0Cu0.2)

  • Terminal Form:

    BALL

  • Terminal Pitch:

    0.8 mm

  • Terminal Position:

    BOTTOM

  • Time@Peak Reflow Temperature-Max (s):

    30

  • Width:

    8 mm

MT41K256M16TW-107:P Frequently Asked Questions (FAQs)

  • The maximum operating temperature range for the MT41K256M16TW-107:P is 0°C to 95°C, with a storage temperature range of -40°C to 100°C.
  • To ensure signal integrity on the address and command bus, it is recommended to use a controlled impedance PCB design, keep the signal traces short and matched, and use a termination scheme such as ODT (On-Die Termination) or series termination.
  • The recommended refresh rate for the MT41K256M16TW-107:P is 4x refresh per tREFI (Refresh Interval) of 3.9 μs at 1.2V and 2.5 μs at 1.35V.
  • The MT41K256M16TW-107:P is designed to operate at a voltage supply of 1.2V ± 0.06V. Using a different voltage supply may affect the module's performance and reliability.
  • It is recommended to implement error detection and correction mechanisms, such as ECC (Error-Correcting Code) or CRC (Cyclic Redundancy Check), to handle errors and retries in your system design.

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MT41K256M16TW-107:P Overview

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Image Part Number Model
Part Image NT5CC256M16DP-EKH Nanya Technology Corporation

DDR3L DRAM, 256MX16, CMOS, PBGA96

Part Image MT41K256M16TW-107IT:P Micron Technology Inc

DDR3L DRAM, 256MX16, 0.195ns, CMOS, PBGA96

Part Image MT41K256M16TW-107AUT:P Micron Technology Inc

DDR3L DRAM, 256MX16, 0.195ns, CMOS, PBGA96

Part Image MT41K256M16TW-107IT:PTR Micron Technology Inc

DDR3L DRAM, 256MX16, 0.195ns, CMOS, PBGA96

Part Image NT5CC256M16DP-EKA Nanya Technology Corporation

DDR3L DRAM, 256MX16, CMOS, PBGA96

For a full list of alternate parts for MT41K256M16TW-107:P, check out Findchips.com