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MT47H128M16RT-25E:C - Micron

Description: MICRON - MT47H128M16RT-25E:C - SDRAM, DDR2. 2GBIT, 84FBGA

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MT47H128M16RT-25E:C - Micron PCB footprint - BGA - BGA - 84-Ball FBGA Package (9 x 12.5mm)
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MT47H128M16RT-25E:C - Micron  - 3D model - BGA - 84-Ball FBGA Package (9 x 12.5mm)
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MT47H128M16RT-25E:C Details

  • Manufacturer Part Number:

    MT47H128M16RT-25E:C

  • Pbfree Code:

    Yes

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    End Of Life

  • Part Package Code:

    BGA

  • Package Description:

    9 X 12.50 MM, ROHS COMPLIANT, FBGA-84

  • Pin Count:

    84

  • ECCN Code:

    EAR99

  • HTS Code:

    8542.32.00.36

  • Manufacturer:

    Micron Technology Inc

  • YTEOL:

    1

  • Access Mode:

    MULTI BANK PAGE BURST

  • Access Time-Max:

    0.4 ns

  • Additional Feature:

    AUTO/SELF REFRESH

  • Clock Frequency-Max (fCLK):

    400 MHz

  • I/O Type:

    COMMON

  • Interleaved Burst Length:

    4,8

  • JESD-30 Code:

    R-PBGA-B84

  • JESD-609 Code:

    e1

  • Length:

    12.5 mm

  • Memory Density:

    2147483648 bit

  • Memory IC Type:

    DDR2 DRAM

  • Memory Width:

    16

  • Number of Functions:

    1

  • Number of Ports:

    1

  • Number of Terminals:

    84

  • Number of Words:

    134217728 words

  • Number of Words Code:

    128000000

  • Operating Mode:

    SYNCHRONOUS

  • Operating Temperature-Max:

    85 °C

  • Organization:

    128MX16

  • Output Characteristics:

    3-STATE

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Code:

    TFBGA

  • Package Equivalence Code:

    BGA84,9X15,32

  • Package Shape:

    RECTANGULAR

  • Package Style:

    GRID ARRAY, THIN PROFILE, FINE PITCH

  • Peak Reflow Temperature (Cel):

    260

  • Qualification Status:

    Not Qualified

  • Refresh Cycles:

    8192

  • Seated Height-Max:

    1.2 mm

  • Self Refresh:

    YES

  • Sequential Burst Length:

    4,8

  • Standby Current-Max:

    0.012 A

  • Supply Current-Max:

    0.33 mA

  • Supply Voltage-Max (Vsup):

    1.9 V

  • Supply Voltage-Min (Vsup):

    1.7 V

  • Supply Voltage-Nom (Vsup):

    1.8 V

  • Surface Mount:

    YES

  • Technology:

    CMOS

  • Temperature Grade:

    OTHER

  • Terminal Finish:

    TIN SILVER COPPER

  • Terminal Form:

    BALL

  • Terminal Pitch:

    0.8 mm

  • Terminal Position:

    BOTTOM

  • Time@Peak Reflow Temperature-Max (s):

    30

  • Width:

    9 mm

MT47H128M16RT-25E:C Frequently Asked Questions (FAQs)

  • The maximum operating temperature range for the MT47H128M16RT-25E:C is 0°C to 95°C.
  • To ensure signal integrity on the memory bus, it is recommended to follow the PCB layout guidelines provided in the Micron application note AN-801, 'PCB Design Guide for DDR4 SDRAM Unbuffered DIMMs'.
  • The recommended refresh rate for the MT47H128M16RT-25E:C is 4x per tREFI (Refresh Interval) = 7.8us, which is equivalent to a refresh rate of 3.9us at 2133MT/s.
  • The MT47H128M16RT-25E:C is designed to operate at a voltage supply of 1.2V, but it can also operate at a voltage supply of 1.35V with some performance degradation. However, it is not recommended to use this module with a voltage supply outside of the 1.2V to 1.35V range.
  • The MT47H128M16RT-25E:C supports error detection and correction using ECC (Error-Correcting Code) and CRC (Cyclic Redundancy Check). It is recommended to implement error detection and correction mechanisms in your system to handle errors and retries.

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MT47H128M16RT-25E:C Overview

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Part Image MT47H128M16RT-25EAIT:C Micron Technology Inc

DDR2 DRAM, 128MX16, 0.4ns, CMOS, PBGA84

Part Image MT47H128M16PK-25EIT:C Micron Technology Inc

DDR2 DRAM, 128MX16, 0.4ns, CMOS, PBGA84

Part Image MT47H128M16RT-25EAAT:C Micron Technology Inc

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Part Image MT47H128M16RT-25EAAT:A Micron Technology Inc

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Part Image MT47H128M16RT-25EXIT:C Micron Technology Inc

DDR DRAM, 128MX16, 0.4ns, CMOS, PBGA84, 9 X 12.50 MM, ROHS COMPLIANT, FBGA-84

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