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MT47H32M16NF-25E:H - Micron

Description: IC DRAM 512MBIT PARALLEL 84FBGA

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PCB Footprints
MT47H32M16NF-25E:H - Micron PCB footprint - BGA - BGA - 84-Ball FBGA Package (8mm x 12.5mm) – x16; "NF" Die Rev :M-1
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MT47H32M16NF-25E:H - Micron  - 3D model - BGA - 84-Ball FBGA Package (8mm x 12.5mm) – x16; "NF" Die Rev :M-1
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MT47H32M16NF-25E:H Details

  • Manufacturer Part Number:

    MT47H32M16NF-25E:H

  • Pbfree Code:

    Yes

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Part Package Code:

    BGA

  • Package Description:

    FBGA-84

  • Pin Count:

    84

  • ECCN Code:

    EAR99

  • HTS Code:

    8542.32.00.28

  • Manufacturer:

    Micron Technology Inc

  • YTEOL:

    4.75

  • Access Mode:

    FOUR BANK PAGE BURST

  • Access Time-Max:

    0.4 ns

  • Additional Feature:

    AUTO/SELF REFRESH

  • Clock Frequency-Max (fCLK):

    400 MHz

  • I/O Type:

    COMMON

  • Interleaved Burst Length:

    4,8

  • JESD-30 Code:

    R-PBGA-B84

  • JESD-609 Code:

    e1

  • Length:

    12.5 mm

  • Memory Density:

    536870912 bit

  • Memory IC Type:

    DDR2 DRAM

  • Memory Width:

    16

  • Number of Functions:

    1

  • Number of Ports:

    1

  • Number of Terminals:

    84

  • Number of Words:

    33554432 words

  • Number of Words Code:

    32000000

  • Operating Mode:

    SYNCHRONOUS

  • Operating Temperature-Max:

    85 °C

  • Organization:

    32MX16

  • Output Characteristics:

    3-STATE

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Code:

    TFBGA

  • Package Equivalence Code:

    BGA84,9X15,32

  • Package Shape:

    RECTANGULAR

  • Package Style:

    GRID ARRAY, THIN PROFILE, FINE PITCH

  • Peak Reflow Temperature (Cel):

    260

  • Qualification Status:

    Not Qualified

  • Refresh Cycles:

    8192

  • Seated Height-Max:

    1.2 mm

  • Self Refresh:

    YES

  • Sequential Burst Length:

    4,8

  • Standby Current-Max:

    0.01 A

  • Supply Current-Max:

    0.215 mA

  • Supply Voltage-Max (Vsup):

    1.9 V

  • Supply Voltage-Min (Vsup):

    1.7 V

  • Supply Voltage-Nom (Vsup):

    1.8 V

  • Surface Mount:

    YES

  • Technology:

    CMOS

  • Temperature Grade:

    OTHER

  • Terminal Finish:

    Tin/Silver/Copper (Sn96.5Ag3.0Cu0.5)

  • Terminal Form:

    BALL

  • Terminal Pitch:

    0.8 mm

  • Terminal Position:

    BOTTOM

  • Time@Peak Reflow Temperature-Max (s):

    30

  • Width:

    8 mm

MT47H32M16NF-25E:H Frequently Asked Questions (FAQs)

  • The maximum operating temperature range for the MT47H32M16NF-25E:H is 0°C to 95°C.
  • The MT47H32M16NF-25E:H requires a refresh command every 64ms (tREFI) to maintain data integrity. The refresh command is issued by the memory controller.
  • The minimum clock cycle time (tCK) for the MT47H32M16NF-25E:H is 1.875ns, which corresponds to a clock frequency of 533MHz.
  • ZQ calibration is required to ensure impedance matching between the DDR3L SDRAM and the memory controller. The ZQ calibration procedure is described in the Micron Technology Inc application note AN-901.
  • The maximum power consumption for the MT47H32M16NF-25E:H is 1.35W, which is the maximum power consumption during self-refresh mode.

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Part Image MT47H32M16NF-25EIT:HTR Micron Technology Inc

DDR2 DRAM, 32MX16, 0.4ns, CMOS, PBGA84