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MT47H64M16NF-25E:M - Micron

Description: IC DRAM 1GBIT PARALLEL 84FBGA

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PCB Footprints
MT47H64M16NF-25E:M - Micron PCB footprint - BGA - BGA - 84-Ball FBGA Package (8mm x 12.5mm) – x16; "NF" Die Rev :M
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MT47H64M16NF-25E:M - Micron  - 3D model - BGA - 84-Ball FBGA Package (8mm x 12.5mm) – x16; "NF" Die Rev :M
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MT47H64M16NF-25E:M Details

  • Manufacturer Part Number:

    MT47H64M16NF-25E:M

  • Pbfree Code:

    Yes

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Part Package Code:

    BGA

  • Package Description:

    FBGA-84

  • Pin Count:

    84

  • Country Of Origin:

    Mainland China, Malaysia, Taiwan

  • ECCN Code:

    EAR99

  • HTS Code:

    8542.32.00.32

  • Manufacturer:

    Micron Technology Inc

  • YTEOL:

    5

  • Access Mode:

    MULTI BANK PAGE BURST

  • Access Time-Max:

    0.4 ns

  • Clock Frequency-Max (fCLK):

    400 MHz

  • I/O Type:

    COMMON

  • Interleaved Burst Length:

    4,8

  • JESD-30 Code:

    R-PBGA-B84

  • JESD-609 Code:

    e1

  • Length:

    12.5 mm

  • Memory Density:

    1073741824 bit

  • Memory IC Type:

    DDR2 DRAM

  • Memory Width:

    16

  • Number of Functions:

    1

  • Number of Ports:

    1

  • Number of Terminals:

    84

  • Number of Words:

    67108864 words

  • Number of Words Code:

    64000000

  • Operating Mode:

    SYNCHRONOUS

  • Operating Temperature-Max:

    85 °C

  • Organization:

    64MX16

  • Output Characteristics:

    3-STATE

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Code:

    TFBGA

  • Package Equivalence Code:

    BGA84,9X15,32

  • Package Shape:

    RECTANGULAR

  • Package Style:

    GRID ARRAY, THIN PROFILE, FINE PITCH

  • Peak Reflow Temperature (Cel):

    260

  • Qualification Status:

    Not Qualified

  • Refresh Cycles:

    8192

  • Seated Height-Max:

    1.2 mm

  • Self Refresh:

    YES

  • Sequential Burst Length:

    4,8

  • Standby Current-Max:

    0.01 A

  • Supply Current-Max:

    0.26 mA

  • Supply Voltage-Max (Vsup):

    1.9 V

  • Supply Voltage-Min (Vsup):

    1.7 V

  • Supply Voltage-Nom (Vsup):

    1.8 V

  • Surface Mount:

    YES

  • Technology:

    CMOS

  • Temperature Grade:

    OTHER

  • Terminal Finish:

    TIN SILVER COPPER

  • Terminal Form:

    BALL

  • Terminal Pitch:

    0.8 mm

  • Terminal Position:

    BOTTOM

  • Time@Peak Reflow Temperature-Max (s):

    30

  • Width:

    8 mm

MT47H64M16NF-25E:M Frequently Asked Questions (FAQs)

  • The maximum operating temperature range for this module is 0°C to 95°C.
  • To ensure signal integrity, use a signal integrity analysis tool to simulate the signal behavior and optimize the PCB design. Additionally, use a termination scheme such as ODT (On-Die Termination) or series termination to reduce signal reflections.
  • The recommended voltage for the VDD and VDDQ power supplies is 1.2V ± 0.06V.
  • The ZQ calibration pin is used to calibrate the output impedance of the DDR4 SDRAM. Connect a 240Ω ± 1% resistor from the ZQ pin to VDDQ, and ensure that the resistor is placed close to the SDRAM module.
  • The maximum current consumption of this module is 1.5A for VDD and 1.5A for VDDQ.

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MT47H64M16NF-25E:M Overview

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